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VS-19TQ015PBF Datasheet, PDF (1/7 Pages) Vishay Siliconix – Optimized for OR-ing applications
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VS-19TQ015PbF, VS-19TQ015-N3
Vishay Semiconductors
Schottky Rectifier, 19 A
Base
cathode
2
TO-220AC
1
3
Cathode Anode
PRODUCT SUMMARY
Package
IF(AV)
VR
VF at IF
IRM max.
TJ max.
Diode variation
EAS
TO-220AC
19 A
15 V
0.32 V
522 mA at 100 °C
125 °C
Single die
6.75 mJ
FEATURES
• 125 °C TJ operation (VR < 5 V)
• Optimized for OR-ing applications
• Ultralow forward voltage drop
• High frequency operation
• Guard ring for enhanced ruggedness and long
term reliability
• High purity, high temperature epoxy
encapsulation for enhanced mechanical strength
and moisture resistance
• Compliant to RoHS Directive 2002/95/EC
• Designed and qualified according to JEDEC-JESD47
• Halogen-free according to IEC 61249-2-21 definition
(-N3 only)
DESCRIPTION
The VS-19TQ015... Schottky rectifier has been optimized for
ultralow forward voltage drop specifically for the OR-ing of
parallel power supplies. The proprietary barrier technology
allows for reliable operation up to 125 °C junction
temperature. Typical applications are in parallel switching
power supplies, converters, reverse battery protection, and
redundant power subsystems.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
CHARACTERISTICS
IF(AV)
VRRM
IFSM
VF
TJ
Rectangular waveform
tp = 5 μs sine
19 Apk, TJ = 75 °C
Range
VALUES
19
15
700
0.32
- 55 to 125
UNITS
A
V
A
V
°C
VOLTAGE RATINGS
PARAMETER
Maximum DC reverse voltage
Maximum working peak reverse voltage
SYMBOL
VR
VRWM
VS-19TQ015PbF
15
VS-19TQ015-N3
15
UNITS
V
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Maximum average forward current
See fig. 5
IF(AV)
Maximum peak one cycle
non-repetitive surge current
IFSM
See fig. 7
TEST CONDITIONS
50 % duty cycle at TC = 80 °C, rectangular waveform
5 µs sine or 3 µs rect. pulse Following any rated load
condition and with rated
10 ms sine or 6 ms rect. pulse
VRRM applied
VALUES
19
700
330
UNITS
A
Non-repetitive avalanche energy
Repetitive avalanche current
EAS
TJ = 25 °C, IAS = 1.50 A, L = 6 mH
6.75
mJ
IAR
Current decaying linearly to zero in 1 μs
Frequency limited by TJ maximum VA = 3 x VR typical
1.50
A
Revision: 25-Aug-11
1
Document Number: 94151
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000