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VS-18TQ0HN3 Datasheet, PDF (1/7 Pages) Vishay Siliconix – High Performance Schottky Rectifier, 18 A
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VS-18TQ0..HN3 Series
Vishay Semiconductors
High Performance Schottky Rectifier, 18 A
Base
cathode
2
TO-220AC
1
3
Cathode Anode
PRODUCT SUMMARY
IF(AV)
VR
VF at IF
IRM max.
TJ max.
EAS
Package
Diode variation
18 A
35 V to 45 V
0.53 V
25 mA at 125 °C
175 °C
24 mJ
TO-220AC
Single die
FEATURES
• 175 °C TJ operation
• Low forward voltage drop
• High frequency operation
• High purity, high temperature epoxy
encapsulation for enhanced mechanical
strength and moisture resistance
• Guard ring for enhanced ruggedness and long
term reliability
• AEC-Q101 qualified meets JESD 201 class 2 whisker test
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION
The VS-18TQ... Schottky rectifier series has been optimized
for low reverse leakage at high temperature. The proprietary
barrier technology allows for reliable operation up to 175 °C
junction temperature. Typical applications are in switching
power supplies, converters, freewheeling diodes, and
reverse battery protection.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
CHARACTERISTICS
IF(AV)
Rectangular waveform
VRRM
Range
IFSM
tp = 5 μs sine
VF
18 Apk, TJ = 125 °C
TJ
Range
VALUES
18
35 to 45
1800
0.53
-55 to 175
UNITS
A
V
A
V
°C
VOLTAGE RATINGS
PARAMETER
Maximum DC reverse voltage
Maximum working peak reverse
voltage
SYMBOL
VR
VRWM
VS-18TQ035HN3
35
VS-18TQ040HN3
40
VS-18TQ045HN3
45
UNITS
V
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Maximum average forward current 
See fig. 5
SYMBOL
TEST CONDITIONS
IF(AV)
50 % duty cycle at TC = 149 °C, rectangular waveform
VALUES
18
Maximum peak one cycle
non-repetitive surge current 
See fig. 7
5 μs sine or 3 μs rect. pulse Following any rated load 1800
IFSM
condition and with rated
10 ms sine or 6 ms rect. pulse VRRM applied
390
Non-repetitive avalanche energy
Repetitive avalanche current
EAS
TJ = 25 °C, IAS = 3.6 A, L = 3.7 mH
24
IAR
Current decaying linearly to zero in 1 μs
Frequency limited by TJ maximum VA = 1.5 x VR typical
3.6
UNITS
A
mJ
A
Revision: 05-Mar-14
1
Document Number: 94958
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000