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VS-18TQ035S-M3_15 Datasheet, PDF (1/8 Pages) Vishay Siliconix – High Performance Schottky Rectifier, 18 A
VS-18TQ035S-M3, VS-18TQ040S-M3, VS-18TQ045S-M3
www.vishay.com
Vishay Semiconductors
High Performance Schottky Rectifier, 18 A
Base
cathode
2
D2PAK
1
N/C
3
Anode
PRODUCT SUMMARY
IF(AV)
VR
VF at IF
IRM
TJ max.
EAS
Package
Diode variation
18 A
35 V, 40 V, 45 V
0.53 V
25 mA at 125 °C
175 °C
24 mJ
TO-263AB (D2PAK)
Single die
FEATURES
• 175 °C TJ operation
• Low forward voltage drop
• High frequency operation
• High purity, high temperature epoxy
encapsulation for enhanced mechanical
strength and moisture resistance
• Guard ring for enhanced ruggedness and long
term reliability
• Meets MSL level 1, per J-STD-020, LF maximum peak
of 260 °C
• Designed and qualified according to JEDEC®-JESD 47
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION
The VS-18TQ... Schottky rectifier series has been optimized
for low reverse leakage at high temperature. The proprietary
barrier technology allows for reliable operation up to 175 °C
junction temperature. Typical applications are in switching
power supplies, converters, freewheeling diodes, and
reverse battery protection.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
CHARACTERISTICS
IF(AV)
VRRM
IFSM
Rectangular waveform
Range
tp = 5 μs sine
VF
18 Apk, TJ = 125 °C
TJ
Range
VALUES
18
35 to 45
1800
0.53
-55 to 175
UNITS
A
V
A
V
°C
VOLTAGE RATINGS
PARAMETER
Maximum DC reverse voltage
Maximum working peak reverse voltage
SYMBOL
VR
VRWM
VS-18TQ035S-M3 VS-18TQ040S-M3 VS-18TQ045S-M3
35
40
45
UNITS
V
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Maximum average forward current
See fig. 5
SYMBOL
IF(AV)
TEST CONDITIONS
50 % duty cycle at TC = 149 °C, rectangular waveform
Maximum peak one cycle
non-repetitive surge current
See fig. 7
5 μs sine or 3 μs rect. pulse
Following any rated
IFSM
load condition and with
10 ms sine or 6 ms rect. pulse rated VRRM applied
Non-repetitive avalanche energy
Repetitive avalanche current
EAS
TJ = 25 °C, IAS = 3.6 A, L = 3.7 mH
IAR
Current decaying linearly to zero in 1 μs
Frequency limited by TJ maximum VA = 1.5 x VR typical
VALUES
18
1800
390
24
3.6
UNITS
A
A
mJ
A
Revision: 25-Feb-14
1
Document Number: 94928
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000