VS-16TTS16SPBF Datasheet, PDF (1/8 Pages) Vishay Siliconix – Thyristor Surface Mount Phase Control SCR

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VS-16TTS16SPbF Series
Vishay Semiconductors
Thyristor Surface Mount Phase Control SCR, 16 A
2
Anode
D²PAK
13
Cathode Gate
PRODUCT SUMMARY
Package
Diode variation
I_T(AV)
V_DRM/V_RRM
V_TM
I_GT
T_J
TO-263AB (D²PAK)
Single SCR
10 A
1600 V
1.4 V
60 mA
- 40 °C to 125 °C
FEATURES
• Meets MSL level 1, per J-STD-020,
LF maximum peak of 260 °C
• Designed and qualified according
JEDEC-JESD47
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
APPLICATIONS
• Input rectification (soft start)
• Vishay input diodes, switches and output rectifiers which
are in identical package outlines
DESCRIPTION
The VS-16TTS16SPbF High Voltage Series of silicon
controlled rectifiers are specifically designed for medium
power switching and phase control applications. The glass
passivation technology used has reliable operation up to
125 °C junction temperature.

OUTPUT CURRENT IN TYPICAL APPLICATIONS
APPLICATIONS
SINGLE-PHASE BRIDGE
NEMA FR-4 or G-10 glass fabric-based epoxy
2.5
with 4 oz. (140 μm) copper
Aluminum IMS, R_thCA = 15 °C/W
6.3
Aluminum IMS with heatsink, R_thCA = 5 °C/W
14.0
Note
• T_A = 55 °C, T_J = 125 °C, footprint 300 mm²
THREE-PHASE BRIDGE
3.5
9.5
18.5
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
CHARACTERISTICS
I_T(AV)
I_RMS
V_RRM/V_DRM
I_TSM
V_T
dV/dt
Sinusoidal waveform
10 A, T_J = 25 °C
dI/dt
T_J
VALUES
10
16
1600
200
1.4
500
150
- 40 to 125
VOLTAGE RATINGS
PART NUMBER
VS-16TTS16SPbF
V_RRM, MAXIMUM PEAK
REVERSE VOLTAGE
V
1600
V_DRM, MAXIMUM PEAK
DIRECT VOLTAGE
V
1600
UNITS
A
UNITS
A
V
A
V
V/μs
A/μs
°C
I_RRM/I_DRM
AT 125 °C
mA
10
Revision: 19-Jun-13
1
Document Number: 94590
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000