VS-16CTQS-M3 Datasheet, PDF (1/8 Pages) Vishay Siliconix – Low forward voltage drop

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VS-16CTQ...S-M3, VS-16CTQ...-1-M3 Series
Vishay Semiconductors
High Performance Schottky Rectifier, 2 x 8 A
D²PAK
TO-262
Base
common
cathode
2
Base
common
cathode
2
2
1 _Common 3
Anode cathode Anode
VS-16CTQ...S-M3
2
1 _Common 3
Anode cathode Anode
VS-16CTQ...-1-M3
PRODUCT SUMMARY
I_F(AV)
V_R
V_F at I_F
I_RM
T_J max.
E_AS
Package
2x8A
60 V to 100 V
0.58 V
7.0 mA at 125 °C
175 °C
7.5 mJ
TO-263AB (D²PAK), TO-262AA
Diode variation
Common cathode
FEATURES
• 175 °C T_J operation
• Center tap configuration
• Low forward voltage drop
• High purity, high temperature epoxy
encapsulation for enhanced mechanical
strength and moisture resistance
• High frequency operation
• Guard ring for enhanced ruggedness and long term
reliability
• Meets MSL level 1, per J-STD-020, LF maximum peak
of 260 °C
• Designed and qualified according to JEDEC^®-JESD 47
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION
This center tap Schottky rectifier series has been optimized
for low reverse leakage at high temperature. The proprietary
barrier technology allows for reliable operation up to 175 °C
junction temperature. Typical applications are in switching
power supplies, converters, freewheeling diodes, and
reverse battery protection.
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MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
CHARACTERISTICS
I_F(AV)
V_RRM
I_FSM
V_F
T_J
Rectangular waveform
t_p = 5 μs sine
8 A_pk, T_J = 125 °C (per leg)
Range
VALUES
16
60 to 100
850
0.58
-55 to 175
UNITS
A
V
A
V
°C
VOLTAGE RATINGS
PARAMETER
SYMBOL
Maximum DC reverse voltage
Maximum working peak reverse voltage
V_R
V_RWM
VS-16CTQ060S-M3
VS-16CTQ060-1-M3
60
VS-16CTQ080S-M3
VS-16CTQ080-1-M3
80
VS-16CTQ100S-M3
VS-16CTQ100-1-M3
100
UNITS
V
Revision: 12-Mar-10
1
Document Number: 94929
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000