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VS-16CTQHN3 Datasheet, PDF (1/7 Pages) Vishay Siliconix – Low forward voltage drop
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VS-16CTQ...HN3 Series
Vishay Semiconductors
High Performance Schottky Rectifier, 2 x 8 A
Base 2
common
cathode
1 23
TO-220AB
Anode
2
Anode
1 Common 3
cathode
PRODUCT SUMMARY
Package
IF(AV)
VR
VF at IF
IRM max.
TJ max.
Diode variation
EAS
TO-220AB
2x8A
60 V, 80 V, 100 V
0.58 V
7 mA at 125 °C
175 °C
Common cathode
7.5 mJ
FEATURES
• 175 °C TJ operation
• Low forward voltage drop
• High frequency operation
• High purity, high temperature epoxy
encapsulation for enhanced mechanical
strength and moisture resistance
• Guard ring for enhanced ruggedness and long
term reliability
• AEC-Q101 qualified
• Meets JESD 201 class 2 whisker test
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION
This center tap Schottky rectifier series has been optimized
for low reverse leakage at high temperature. The proprietary
barrier technology allows for reliable operation up to 175 °C
junction temperature. Typical applications are in switching
power supplies, converters, freewheeling diodes, and
reverse battery protection.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
CHARACTERISTICS
IF(AV)
Rectangular waveform
VRRM
IFSM
tp = 5 μs sine
VF
8 Apk, TJ = 125 °C (per leg)
TJ
Range
VALUES
16
60 to 100
850
0.58
- 55 to 175
UNITS
A
V
A
V
°C
VOLTAGE RATINGS
PARAMETER
Maximum DC reverse voltage
Maximum working peak
reverse voltage
SYMBOL
VR
VRWM
VS-16CTQ060HN3
60
VS-16CTQ080HN3
80
VS-16CTQ100HN3
100
UNITS
V
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum average forward
current

See fig. 5
per leg
per device
IF(AV)
50 % duty cycle at TC = 148 °C, rectangular waveform
Maximum peak one cycle non-repetitive 
surge current per leg 
See fig. 7
5 µs sine or 3 µs rect. pulse Following any rated load
IFSM
condition and with rated
10 ms sine or 6 ms rect. pulse
VRRM applied
Non-repetitive avalanche energy per leg
Repetitive avalanche current per leg
EAS
TJ = 25 °C, IAS = 0.50 A, L = 60 mH
IAR
Current decaying linearly to zero in 1 μs
Frequency limited by TJ maximum VA = 1.5 x VR typical
VALUES
8
16
850
275
7.50
0.50
UNITS
A
A
mJ
A
Revision: 05-Mar-14
1
Document Number: 94848
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000