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VS-16CTQ060PBF Datasheet, PDF (1/8 Pages) Vishay Siliconix – Schottky Rectifier
VS-16CTQ...PbF Series, VS-16CTQ...-N3 Series
www.vishay.com
Vishay Semiconductors
Schottky Rectifier, 2 x 8 A
Base 2
common
cathode
TO-220AB
Anode
2
Anode
1 Common 3
cathode
PRODUCT SUMMARY
Package
IF(AV)
VR
VF at IF
IRM max.
TJ max.
Diode variation
EAS
TO-220AB
2x8A
60 V, 80 V, 100 V
0.58 V
7 mA at 125 °C
175 °C
Common cathode
7.5 mJ
FEATURES
• 175 °C TJ operation
• Low forward voltage drop
• High frequency operation
• High purity, high temperature epoxy
encapsulation for enhanced mechanical strength
and moisture resistance
• Guard ring for enhanced ruggedness and long
term reliability
• Compliant to RoHS Directive 2002/95/EC
• Designed and qualified according to JEDEC-JESD47
• Halogen-free according to IEC 61249-2-21 definition
(-N3 only)
DESCRIPTION
This center tap Schottky rectifier series has been optimized
for low reverse leakage at high temperature. The proprietary
barrier technology allows for reliable operation up to 175 °C
junction temperature. Typical applications are in switching
power supplies, converters, freewheeling diodes, and
reverse battery protection.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
CHARACTERISTICS
IF(AV)
Rectangular waveform
VRRM
IFSM
tp = 5 μs sine
VF
8 Apk, TJ = 125 °C (per leg)
TJ
Range
VALUES
16
60 to 100
850
0.58
- 55 to 175
UNITS
A
V
A
V
°C
VOLTAGE RATINGS
PARAMETER
SYMBOL
VS-
16CTQ060PbF
VS-
16CTQ060-N3
VS-
16CTQ080PbF
VS-
16CTQ080-N3
VS-
16CTQ100PbF
VS-
16CTQ100-N3
UNITS
Maximum DC
reverse voltage
VR
Maximum working
60
60
80
80
100
100
V
peak reverse
voltage
VRWM
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
Maximum average
forward current
See fig. 5
per leg
8
IF(AV)
50 % duty cycle at TC = 148 °C, rectangular waveform
per device
16
Maximum peak one cycle non-repetitive
surge current per leg
See fig. 7
5 µs sine or 3 µs rect. pulse Following any rated load 850
IFSM
condition and with rated
10 ms sine or 6 ms rect. pulse
VRRM applied
275
Non-repetitive avalanche energy per leg
EAS
TJ = 25 °C, IAS = 0.50 A, L = 60 mH
7.50
UNITS
A
A
mJ
Revision: 25-Aug-11
1
Document Number: 94146
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000