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VS-15MQ040NPBF_15 Datasheet, PDF (1/6 Pages) Vishay Siliconix – High Performance Schottky Rectifier, 1.5 A
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VS-15MQ040NPbF
Vishay Semiconductors
High Performance Schottky Rectifier, 1.5 A
DO-214AC (SMA)
Cathode
Anode
PRODUCT SUMMARY
Package
IF(AV)
VR
VF at IF
IRM
TJ max.
Diode variation
EAS
DO-214AC (SMA)
1.5 A
40 V
0.43 V
20 mA at 125 °C
150 °C
Single die
6.0 mJ
FEATURES
• Surface mountable
• Extremely low forward voltage
• Compact size
• Improved reverse blocking voltage capability relative to
other similar size Schottky
• Meets MSL level 1, per J-STD-020, LF maximum peak
of 260 °C
• Designed and qualified for industrial level
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
APPLICATIONS
• Switching power supplies
• Meter protection
• Reverse protection for power input to PC board circuits
• Battery isolation and charging
• Low threshold voltage diode
• Freewheeling or by-pass diode
• Low voltage clamp
DESCRIPTION
The VS-15MQ040NPbF Schottky rectifier is designed to be
used for low power applications where a reverse voltage of
40 V is encountered and surface mountable is required.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
IF(AV)
VRRM
IFSM
VF
TJ
Rectangular waveform
tp = 5 μs sine
2 Apk, TJ = 125 °C
Range
CHARACTERISTICS
VOLTAGE RATINGS
PARAMETER
SYMBOL
Maximum DC reverse voltage
Maximum working peak reverse voltage
VR
VRWM
VS-15MQ040NPbF
40
VALUES
1.5
40
330
0.43
-40 to +150
UNITS
A
V
A
V
°C
UNITS
V
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Maximum average forward current
See fig. 4
Maximum peak one cycle
non-repetitive surge current
See fig. 6
Non-repetitive avalanche energy
Repetitive avalanche current
IF(AV)
IF(AV)
IFSM
EAS
IAR
TEST CONDITIONS
50 % duty cycle at TL = 105 °C, rectangular waveform
On PC board 9 mm2 island (0.013 mm thick copper pad area)
50 % duty cycle at TL = 114 °C, rectangular waveform
On PC board 9 mm2 island (0.013 mm thick copper pad area)
5 μs sine or 3 μs rect. pulse
10 ms sine or 6 ms rect. pulse
Following any rated load
condition and with rated
VRRM applied
TJ = 25 °C, IAS = 1 A, L = 12 mH
Current decaying linearly to zero in 1 μs
Frequency limited by TJ maximum VA = 1.5 x VR typical
VALUES
2.1
1.5
330
140
6.0
1.0
UNITS
A
A
mJ
A
Revision: 16-Feb-15
1
Document Number: 94141
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000