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VS-15MQ040HM3 Datasheet, PDF (1/6 Pages) Vishay Siliconix – High Performance Schottky Rectifier, 1.5 A
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VS-15MQ040HM3
Vishay Semiconductors
High Performance Schottky Rectifier, 1.5 A
DO-214AC (SMA)
Cathode
Anode
PRODUCT SUMMARY
Package
IF(AV)
VR
VF at IF
IRM
TJ max.
Diode variation
EAS
DO-214AC (SMA)
1.5 A
40 V
0.34 V
20 mA at 125 °C
150 °C
Single die
6.0 mJ
FEATURES
• Low forward voltage drop
• Guard ring for enhanced ruggedness and long
term reliability
• Small footprint, surface mountable
• High frequency operation
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 260 °C
• Meets JESD 201 class 2 whisker test
• AEC-Q101 qualified
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
APPLICATIONS
• Switching power supplies
• Meter protection
• Reverse protection for power input to PC board circuits
• Battery isolation and charging
• Low threshold voltage diode
• Freewheeling or by-pass diode
• Low voltage clamp
DESCRIPTION
The VS-15MQ040HM3 Schottky rectifier is designed to be
used for low power applications where a reverse voltage of
40 V is encountered and surface mountable is required.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
CHARACTERISTICS
IF(AV)
VRRM
IFSM
VF
TJ
Rectangular waveform
tp = 5 μs sine
2 Apk, TJ = 125 °C
Range
VALUES
1.5
40
330
0.43
-40 to +150
UNITS
A
V
A
V
°C
VOLTAGE RATINGS
PARAMETER
Maximum DC reverse voltage
Maximum working peak reverse voltage
SYMBOL
VR
VRWM
VS-15MQ040HM3
40
UNITS
V
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Maximum average forward current
See fig. 4
IF(AV)
Maximum peak one cycle
non-repetitive surge current
IFSM
See fig. 6
Non-repetitive avalanche energy
EAS
Repetitive avalanche current
IAR
TEST CONDITIONS
50 % duty cycle at TL = 105 °C, rectangular waveform
On PC board 9 mm2 island
(0.013 mm thick copper pad area)
50 % duty cycle at TL = 113 °C, rectangular waveform
On PC board 9 mm2 island
(0.013 mm thick copper pad area)
5 μs sine or 3 μs rect. pulse
Following any rated
10 ms sine or 6 ms rect. pulse
load condition and with
rated VRRM applied
TJ = 25 °C, IAS = 1 A, L = 12 mH
Current decaying linearly to zero in 1 μs
Frequency limited by TJ maximum VA = 1.5 x VR typical
VALUES
2.1
1.5
330
140
6.0
1.0
UNITS
A
A
mJ
A
Revision: 02-Apr-15
1
Document Number: 94837
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000