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VS-150SQ Datasheet, PDF (1/7 Pages) Vishay Siliconix – High frequency operation
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VS-150SQ... Series, VS-150SQ...-M3 Series
Vishay Semiconductors
Photovoltaic Solar Cell Protection Schottky Rectifier, 15 A
DO-204AR
Cathode
Anode
PRODUCT SUMMARY
Package
IF(AV)
VR
VF at IF
IRM max.
TJ max.
Diode variation
EAS
DO-204AR
15 A
30 V, 35 V, 40 V, 45 V
0.48 V
70 mA at 125 °C
150 °C
Single die
12 mJ
FEATURES
• 150 °C TJ operation
• Low forward voltage drop
• High frequency operation
• Guard ring for enhanced ruggedness and
long term reliability
• High purity, high temperature epoxy
encapsulation for enhanced mechanical
strength and moisture resistance
• Compliant to RoHS Directive 2002/95/EC
• Designed and qualified for commercial level
• Halogen-free according to IEC 61249-2-21 definition
(-M3 only)
DESCRIPTION
The VS-150SQ... axial leaded Schottky rectifier series has
been optimized for very low forward voltage drop, with
moderate leakage. The proprietary barrier technology allows
for reliable operation up to 150 °C junction temperature.
Typical applications are in switching power supplies,
converters, freewheeling diodes, and reverse battery
protection.
TJ  200 °C for use in solar cell box as a bypass diode for
protection, using DC forward current without reverse bias.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
CHARACTERISTICS
IF(AV)
VRRM
IFSM
DC
tp = 5 μs sine
VF
15 Apk, TJ = 125 °C
TJ
Range (1)
Note
(1) TJ  200 °C for DC current without reverse voltage
VALUES
15
30 to 45
2150
0.48
- 55 to 150
UNITS
A
V
A
V
°C
VOLTAGE RATINGS
PARAMETER
VS-150SQ030
VS-150SQ035
VS-150SQ040
VS-150SQ045
SYMBOL
VS-150SQ030-M3 VS-150SQ035-M3 VS-150SQ040-M3 VS-150SQ045-M3
Maximum DC reverse voltage
VR
Maximum working peak reverse
30
35
40
45
voltage
VRWM
UNITS
V
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Maximum average forward current
See fig. 5
IF(AV)
Maximum peak one cycle
non-repetitive surge current
IFSM
See fig. 7
Non-repetitive avalanche energy
EAS
Repetitive avalanche current
IAR
TEST CONDITIONS
For DC solar application TC = 172 °C (TJ = 200 °C)
5 μs sine or 3 μs rect. pulse
10 ms sine or 6 ms rect. pulse
Following any rated load
condition and with rated
VRRM applied
TJ = 25 °C, IAS = 1.8 A, L = 7.4 mH
Current decaying linearly to zero in 1 μs
Frequency limited by, TJ maximum VA = 1.5 x VR typical
VALUES
15
2150
340
12
1.8
UNITS
A
mJ
A
Revision: 08-Sep-11
1
Document Number: 93098
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000