VS-12TTS08S-M3 Datasheet, PDF (1/7 Pages) Vishay Siliconix – Thyristor Surface Mount, Phase Control SCR, 8 A

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VS-12TTS08S-M3 Series
Vishay Semiconductors
Thyristor Surface Mount, Phase Control SCR, 8 A
4
Anode
2, 4
2
3
1
TO-263AB (D²PAK)
13
Cathode Gate
PRODUCT SUMMARY
Package
Diode variation
I_T(AV)
V_DRM/V_RRM
V_TM
I_GT
T_J
TO-263AB (D²PAK)
Single SCR
8A
800 V
1.2 V
15 mA
-40 to +125 °C
FEATURES
• Meets MSL level 1, per J-STD-020,
LF maximum peak of 260 °C
• Designed and qualified according
JEDEC^®-JESD 47
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
APPLICATIONS
• Input rectification and crow-bar (soft start)
• Vishay input diodes, switches and output rectifiers which
are available in identical package outlines
DESCRIPTION
The VS-12TTS08S-M3 High Voltage Series of silicon
controlled rectifiers are specifically designed for medium
power switching and phase control applications. The glass
passivation technology used has reliable operation up to
125 °C junction temperature.
OUTPUT CURRENT IN TYPICAL APPLICATIONS
APPLICATIONS
SINGLE-PHASE BRIDGE
Capacitive input filter T_A = 55 °C, T_J = 125 °C,
13.5
common heatsink of 1 °C/W
THREE-PHASE BRIDGE
17
UNITS
A
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER
TEST CONDITIONS
I_T(AV)
I_T(RMS)
V_RRM/V_DRM
I_TSM
V_T
dV/dt
Sinusoidal waveform
8 A, T_J = 25 °C
dI/dt
T_J
Range
VALUES
8
12.5
800
110
1.2
150
100
-40 to +125
UNITS
A
V
A
V
V/μs
A/μs
°C
VOLTAGE RATINGS
PART NUMBER
VS-12TTS08S-M3
V_RRM, MAXIMUM PEAK
REVERSE VOLTAGE
V
800
V_DRM, MAXIMUM PEAK
DIRECT VOLTAGE
V
800
I_RRM/I_DRM
AT 125 °C
mA
1.0
Revision: 09-Jul-15
1
Document Number: 94892
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000