VS-12TTS08PBF_15 Datasheet, PDF (1/7 Pages) Vishay Siliconix – High Voltage Phase Control Thyristor

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VS-12TTS08PbF, VS-12TTS08-M3
Vishay Semiconductors
High Voltage Phase Control Thyristor, 12 A
2
(A)
1 ²³
TO-220AB
1 (K) (G) 3
PRODUCT SUMMARY
Package
Diode variation
I_T(AV)
V_DRM/V_RRM
V_TM
I_GT
T_J
TO-220AB
Single SCR
8A
800 V
1.2 V
15 mA
- 40 °C to 125 °C
FEATURES
• Designed and qualified according to
JEDEC-JESD47
• 125 °C max. operating junction temperature
• Material categorization:
For definitions of compliance please see
www.vishay.com/doc?99912
APPLICATIONS
Available
• Typical usage is in input rectification crowbar (soft start)
and AC switch in motor control, UPS, welding, and battery
charge.
DESCRIPTION
The VS-12TTS08... high voltage series of silicon controlled
rectifiers are specifically designed for medium power
switching and phase control applications. The glass
passivation technology used has reliable operation up to
125 °C junction temperature.

OUTPUT CURRENT IN TYPICAL APPLICATIONS
APPLICATIONS
SINGLE-PHASE BRIDGE
Capacitive input filter T_A = 55 °C, T_J = 125 °C,
common heatsink of 1 °C/W
13.5
THREE-PHASE BRIDGE
17
UNITS
A
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER
TEST CONDITIONS
I_T(AV)
I_T(RMS)
V_DRM/V_RRM
I_TSM
V_T
Sinusoidal waveform
8 A, T_J = 25 °C
dV/dt
dI/dt
T_J
Range
VOLTAGE RATINGS
PART NUMBER
VS-12TTS08PbF, VS-12TTS08-M3
V_RRM, MAXIMUM
PEAK VOLTAGE
V
800
VALUES
8
12.5
800
110
1.2
150
100
- 40 to 125
V_DRM, MAXIMUM PEAK
DIRECT VOLTAGE
V
800
UNITS
A
V
A
V
V/µs
A/µs
°C
I_RRM/I_DRM
AT 125 °C
mA
1.0
Revision: 26-Jul-13
1
Document Number: 94380
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000