VS-12TTS08PBF Datasheet, PDF (1/7 Pages) Vishay Siliconix – Thyristor High Voltage, Phase Control SCR, 12.5 A

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VS-12TTS08PbF Series
Vishay Semiconductors
Thyristor High Voltage, Phase Control SCR, 12.5 A
FEATURES
2
(A)
• Designed and qualified according to
JEDEC-JESD47
• Compliant to RoHS Directive 2002/95/EC
TO-220AB
PRODUCT SUMMARY
Package
Diode variation
I_T(AV)
V_DRM/V_RRM
V_TM
I_GT
T_J
1 (K) (G) 3
TO-220AB
Single SCR
8A
800 V
1.2 V
15 mA
- 40 °C to 125 °C
APPLICATIONS
• Typical applications are in input rectification and crowbar
(soft start) and these products are designed to be used
with Vishay HPP input diodes, switches and output
rectifiers which are available in identical package outlines.
DESCRIPTION
The VS-12TTS08PbF high voltage series of silicon
controlled rectifiers are specifically designed for medium
power switching and phase control applications. The glass
passivation technology used has reliable operation up to
125 °C junction temperature.
OUTPUT CURRENT IN TYPICAL APPLICATIONS
APPLICATIONS
SINGLE-PHASE BRIDGE
Capacitive input filter T_A = 55 °C, T_J = 125 °C,
common heatsink of 1 °C/W
13.5
THREE-PHASE BRIDGE
17
UNITS
A
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER
TEST CONDITIONS
I_T(AV)
Sinusoidal waveform
I_T(RMS)
V_DRM/V_RRM
I_TSM
V_T
8 A, T_J = 25 °C
dV/dt
dI/dt
T_J
Range
VOLTAGE RATINGS
PART NUMBER
VS-12TTS08PbF
V_RRM, MAXIMUM
PEAK VOLTAGE
V
800
VALUES
8
12.5
800
140
1.2
150
100
- 40 to 125
V_DRM, MAXIMUM PEAK
DIRECT VOLTAGE
V
800
UNITS
A
V
A
V
V/µs
A/µs
°C
I_RRM/I_DRM
AT 125 °C
mA
1.0
Revision: 24-Aug-11
1
Document Number: 94380
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