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VS-12TQPBF Datasheet, PDF (1/7 Pages) Vishay Siliconix – Schottky Rectifier, 15 A
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VS-12TQ...PbF Series, VS-12TQ...-N3 Series
Vishay Semiconductors
Schottky Rectifier, 15 A
Base
cathode
2
TO-220AC
PRODUCT SUMMARY
Package
IF(AV)
VR
VF at IF
IRM max.
TJ max.
Diode variation
EAS
1
3
Cathode Anode
TO-220AC
15 A
35 V, 40 V, 45 V
0.50 V
70 mA at 125 °C
150 °C
Single die
16 mJ
FEATURES
• 150 °C TJ operation
• Very low forward voltage drop
• High frequency operation
• High purity, high temperature epoxy
encapsulation for enhanced mechanical strength
and moisture resistance
• Guard ring for enhanced ruggedness and long
term reliability
• Compliant to RoHS Directive 2002/95/EC
• Designed and qualified according to JEDEC-JESD47
• Halogen-free according to IEC 61249-2-21 definition
(-N3 only)
DESCRIPTION
The VS-12TQ... Schottky rectifier series has been optimized
for very low forward voltage drop, with moderate leakage.
The proprietary barrier technology allows for reliable
operation up to 150 °C junction temperature. Typical
applications are in switching power supplies, converters,
freewheeling diodes, and reverse battery protection.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
CHARACTERISTICS
IF(AV)
Rectangular waveform
VRRM
Range
IFSM
tp = 5 μs sine
VF
15 Apk, TJ = 125 °C
TJ
Range
VALUES
15
35 to 45
990
0.50
- 55 to 150
UNITS
A
V
A
V
°C
VOLTAGE RATINGS
PARAMETER
SYMBOL
VS-
12TQ035PbF
VS-
12TQ035-N3
VS-
12TQ040PbF
VS-
12TQ040-N3
VS-
12TQ045PbF
VS-
12TQ045-N3
UNITS
Maximum DC reverse
voltage
VR
Maximum working peak
35
35
40
40
45
45
V
reverse voltage
VRWM
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Maximum average forward current
See fig. 5
IF(AV)
Maximum peak one cycle non-repetitive
surge current
IFSM
See fig. 7
Non-repetitive avalanche energy
EAS
Repetitive avalanche current
IAR
TEST CONDITIONS
50 % duty cycle at TC = 120 °C, rectangular waveform
5 µs sine or 3 µs rect. pulse Following any rated load
condition and with rated
10 ms sine or 6 ms rect. pulse
VRRM applied
TJ = 25 °C, IAS = 2.4 A, L = 5.5 mH
Current decaying linearly to zero in 1 μs
Frequency limited by TJ maximum VA = 1.5 x VR typical
VALUES
15
990
250
16
2.4
UNITS
A
mJ
A
Revision: 25-Aug-11
1
Document Number: 94137
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000