English
Language : 

VS-12TQ035SPBF_15 Datasheet, PDF (1/8 Pages) Vishay Siliconix – High Performance Schottky Rectifier
VS-12TQ035SPbF, VS-12TQ040SPbF, VS-12TQ045SPbF
www.vishay.com
Vishay Semiconductors
High Performance Schottky Rectifier, 15 A
Base
cathode
2
D2PAK
1
N/C
3
Anode
PRODUCT SUMMARY
Package
IF(AV)
VR
VF at IF
IRM
TJ max.
Diode variation
EAS
D2PAK
15 A
35 V, 40 V, 45 V
0.50 V
70 mA at 125 °C
150 °C
Single die
16 mJ
FEATURES
• 150 °C TJ operation
• Very low forward voltage drop
• High frequency operation
• High purity, high temperature epoxy
encapsulation for enhanced mechanical
strength and moisture resistance
• Guard ring for enhanced ruggedness and long
term reliability
• Meets MSL level 1, per J-STD-020, LF maximum peak
of 260 °C
• AEC-Q101 qualified
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION
The VS-12TQ...SPbF Schottky rectifier series has been
optimized for very low forward voltage drop, with moderate
leakage. The proprietary barrier technology allows for
reliable operation up to 150 °C junction temperature. Typical
applications are in switching power supplies, converters,
freewheeling diodes, and reverse battery protection.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
CHARACTERISTICS
IF(AV)
Rectangular waveform
VRRM
Range
IFSM
tp = 5 μs sine
VF
15 Apk, TJ = 125 °C
TJ
Range
VALUES
15
35 to 45
990
0.50
-55 to +150
UNITS
A
V
A
V
°C
VOLTAGE RATINGS
PARAMETER
SYMBOL
Maximum DC reverse voltage
Maximum working peak reverse voltage
VR
VRWM
VS-12TQ035SPbF
35
VS-12TQ040SPbF
40
VS-12TQ045SPbF
45
UNITS
V
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Maximum average forward current
See fig. 5
SYMBOL
TEST CONDITIONS
IF(AV)
50 % duty cycle at TC = 120 °C, rectangular waveform
Maximum peak one cycle
non-repetitive surge current
See fig. 7
5 μs sine or 3 μs rect. pulse Following any rated
IFSM
load condition and with
10 ms sine or 6 ms rect. pulse rated VRRM applied
Non-repetitive avalanche energy
Repetitive avalanche current
EAS
TJ = 25 °C, IAS = 2.4 A, L = 5.5 mH
IAR
Current decaying linearly to zero in 1 μs
Frequency limited by TJ maximum VA = 1.5 x VR typical
VALUES
15
990
250
16
2.4
UNITS
A
A
mJ
A
Revision: 23-May-14
1
Document Number: 94138
For technical questions within your region: DiodesAmericas@vishay.com, iodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000