VS-12TQ035SHM3 Datasheet, PDF (1/7 Pages) Vishay Siliconix – High Performance Schottky Rectifier, 15 A

VS-12TQ035SHM3, VS-12TQ040SHM3, VS-12TQ045SHM3
www.vishay.com
Vishay Semiconductors
High Performance Schottky Rectifier, 15 A
Base
cathode
2
D²PAK
1
N/C
3
Anode
PRODUCT SUMMARY
I_F(AV)
V_R
V_F at I_F
I_RM max.
T_J max.
E_AS
Package
Diode variation
15 A
35 V, 40 V, 45 V
0.50 V
70 mA at 125 °C
150 °C
16 mJ
TO-263AB (D²PAK)
Single die
FEATURES
• 150 °C T_J operation
• Very low forward voltage drop
• High frequency operation
• High purity, high temperature epoxy
encapsulation for enhanced mechanical
strength and moisture resistance
• Guard ring for enhanced ruggedness and long
term reliability
• Meets MSL level 1, per J-STD-020, LF maximum peak
of 260 °C
• AEC-Q101 qualified, meets JESD 201, class 1 whisker
test
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION
The VS-12TQ...SHM3 Schottky rectifier series has been
optimized for very low forward voltage drop, with moderate
leakage. The proprietary barrier technology allows for
reliable operation up to 150 °C junction temperature. Typical
applications are in switching power supplies, converters,
freewheeling diodes, and reverse battery protection.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
CHARACTERISTICS
I_F(AV)
V_RRM
I_FSM
Rectangular waveform
Range
t_p = 5 μs sine
V_F
15 A_pk, T_J = 125 °C
T_J
Range
VALUES
15
35 to 45
990
0.50
-55 to +150
UNITS
A
V
A
V
°C
VOLTAGE RATINGS
PARAMETER
SYMBOL
Maximum DC reverse voltage
Maximum working peak reverse voltage
V_R
V_RWM
VS-12TQ035SHM3
35
VS-12TQ040SHM3
40
VS-12TQ045SHM3
45
UNITS
V
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Maximum average forward current
See fig. 5
I_F(AV)
Maximum peak one cycle
non-repetitive surge current
I_FSM
See fig. 7
Non-repetitive avalanche energy
E_AS
Repetitive avalanche current
I_AR
TEST CONDITIONS
50 % duty cycle at T_C = 120 °C, rectangular waveform
5 μs sine or 3 μs rect. pulse
10 ms sine or 6 ms rect. pulse
Following any rated
load condition and with
rated V_RRM applied
T_J = 25 °C, I_AS = 2.4 A, L = 5.5 mH
Current decaying linearly to zero in 1 μs
Frequency limited by T_J maximum V_A = 1.5 x V_R typical
VALUES
15
990
250
16
2.4
UNITS
A
A
mJ
A
Revision: 24-Feb-15
1
Document Number: 95853
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000