VS-115CNQ015A Datasheet, PDF (1/9 Pages) Vishay Siliconix – Schottky Rectifier New Generation 3 D-61 Package, 2 x 55 A

VS-115CNQ015A PbF Series
Vishay High Power Products
Schottky Rectifier
New Generation 3 D-61 Package, 2 x 55 A
VS-115CNQ015APbF
D-61-8
VS-115CNQ015ASMPbF
Base
common
cathode
1
2
Anode Common
1
cathode
3
Anode
2
D-61-8-SM
VS-115CNQ015ASLPbF
1
2
Anode Common
1
cathode
3
Anode
2
Base
common
cathode
D-61-8-SL
1
Anode
1
3
Anode
2
PRODUCT SUMMARY
I_F(AV)
V_R at T_J = 100 °C
2 x 55 A
15 V
FEATURES
• 125 °C T_J operation (V_R < 5 V)
• Center tap module
• Optimized for OR-ing applications
• Ultralow forward voltage drop
• High frequency operation
• Guard ring for enhanced ruggedness and long term
reliability
• High purity, high temperature epoxy encapsulation for
enhanced mechanical strength and moisture resistance
• New fully transfer-mold low profile, small footprint, high
current package
• Compliant to RoHS directive 2002/95/EC
• Designed and qualified for industrial level
DESCRIPTION
The center tap Schottky rectifier module has been optimized
for ultra low forward voltage drop specifically for the
OR-ing of parallel power supplies. The proprietary barrier
technology allows for reliable operation up to 125 °C
junction temperature. Typical applications are in parallel
switching power supplies, converters, reverse battery
protection, and redundant power subsystems.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
CHARACTERISTICS
I_F(AV)
V_RRM
I_FSM
V_F
T_J
Rectangular waveform
t_p = 5 μs sine
55 Apk, T_J = 75 °C (per leg)
Range
VALUES
110
15
5050
0.33
- 55 to 125
UNITS
A
V
A
V
°C
VOLTAGE RATINGS
PARAMETER
Maximum DC reverse voltage
Maximum working peak reverse voltage
SYMBOL
V_R
V_RWM
TEST CONDITIONS
T_J = 100 °C
T_J = 125 °C
VS-115CNQ015APbF
15
5
UNITS
V
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 94126
Revision: 16-Apr-10
For technical questions, contact: [e-mail]
www.vishay.com
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