VS-10TTS08SPBF Datasheet, PDF (1/8 Pages) Vishay Siliconix – Thyristor High Voltage Surface Mount Phase Control SCR

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VS-10TTS08SPbF Series
Vishay Semiconductors
Thyristor High Voltage Surface Mount Phase Control SCR, 10 A
2
Anode
D²PAK
13
Cathode Gate
PRODUCT SUMMARY
Package
Diode variation
I_T(AV)
V_DRM/V_RRM
V_TM
I_GT
T_J
TO-263AB (D²PAK)
Single SCR
6.5 A
800 V
< 1.15 V
15 mA
- 40 to 125 °C
FEATURES
• Meets MSL level 1, per J-STD-020,
LF maximum peak of 260 °C
• Designed and qualified according
JEDEC-JESD47
• Material categorization:
For definitions of compliance please see
www.vishay.com/doc?99912
APPLICATIONS
• Input rectification (soft start)
• Vishay input diodes, switches and output rectifiers which
are available in identical package outlines
DESCRIPTION
The VS-10TTS08SPbF High Voltage Series of silicon
controlled rectifiers are specifically designed for medium
power switching and phase control applications. The glass
passivation technology used has reliable operation up to
125 °C junction temperature.
OUTPUT CURRENT IN TYPICAL APPLICATIONS
APPLICATIONS
SINGLE-PHASE BRIDGE
NEMA FR-4 or G-10 glass fabric-based epoxy
with 4 oz. (140 μm) copper
2.5
Aluminum IMS, R_thCA = 15 °C/W
6.3
Aluminum IMS with heatsink, R_thCA = 5 °C/W
14.0
Note
• T_A = 55 °C, T_J = 125 °C, footprint 300 mm²
THREE-PHASE BRIDGE
3.5
9.5
18.5
UNITS
A
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER
TEST CONDITIONS
I_T(AV)
I_RMS
V_RRM/V_DRM
I_TSM
V_T
dV/dt
Sinusoidal waveform
6.5 A, T_J = 25 °C
dI/dt
T_J
Range
VALUES
6.5
10
800
110
1.15
150
100
- 40 to 125
UNITS
A
V
A
V
V/μs
A/μs
°C
VOLTAGE RATINGS
PART NUMBER
VS-10TTS08SPbF
V_RRM, MAXIMUM
PEAK REVERSE VOLTAGE
V
800
V_DRM, MAXIMUM PEAK
DIRECT VOLTAGE
V
800
I_RRM/I_DRM
AT 125 °C
mA
1.0
Revision: 19-Jun-13
1
Document Number: 94562
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000