VS-10TTS08PBF Datasheet, PDF (1/7 Pages) Vishay Siliconix – Thyristor High Voltage, Phase Control SCR, 10 A

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VS-10TTS08PbF Series
Vishay Semiconductors
Thyristor High Voltage, Phase Control SCR, 10 A
FEATURES
2
(A)
• Designed and qualified according to
JEDEC-JESD47
• Compliant to RoHS Directive 2002/95/EC
TO-220AB
PRODUCT SUMMARY
Package
Diode variation
I_T(AV)
V_DRM/V_RRM
V_TM
I_GT
T_J
1 (K) (G) 3
TO-220AB
Single SCR
6.5 A
800 V
1.15 V
15 mA
- 40 °C to 125 °C
APPLICATIONS
• Typical applications are in input rectification and crow-bar
(soft start) and these products are designed to be used
with Vishay HPP input diodes, switches and output
rectifiers which are available in identical package outlines.
DESCRIPTION
The VS-10TTS08PbF high voltage series of silicon
controlled rectifiers are specifically designed for medium
power switching and phase control applications. The glass
passivation technology used has reliable operation up to
125 °C junction temperature.
OUTPUT CURRENT IN TYPICAL APPLICATIONS
APPLICATIONS
SINGLE-PHASE BRIDGE
Capacitive input filter T_A = 55 °C, T_J = 125 °C,
common heatsink of 1 °C/W
13.5
THREE-PHASE BRIDGE
17
UNITS
A
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER
TEST CONDITIONS
I_T(AV)
I_T(RMS)
V_RRM/V_DRM
I_TSM
V_T
dV/dt
dI/dt
T_J
Sinusoidal waveform
6.5 A, T_J = 25 °C
Range
VALUES
6.5
10
800
140
1.15
150
100
- 40 to 125
UNITS
A
V
A
V
V/μs
A/μs
°C
VOLTAGE RATINGS
PART NUMBER
VS-10TTS08PbF
V_RRM, MAXIMUM
PEAK REVERSE VOLTAGE
V
800
V_DRM, MAXIMUM PEAK
DIRECT VOLTAGE
V
800
I_RRM/I_DRM
AT 125 °C
mA
1.0
Revision: 23-Aug-11
1
Document Number: 94572
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