VS-10TQ035SHM3 Datasheet, PDF (1/7 Pages) Vishay Siliconix – High Performance Schottky Rectifier, 10 A

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VS-10TQ035SHM3, VS-10TQ045SHM3
Vishay Semiconductors
High Performance Schottky Rectifier, 10 A
Base
cathode
2
D²PAK
1
N/C
3
Anode
PRODUCT SUMMARY
I_F(AV)
V_R
V_F at I_F
I_RM max.
T_J max.
E_AS
Package
Diode variation
10 A
35 V, 45 V
0.49 V
15 mA at 125 °C
175 °C
13 mJ
TO-263AB (D²PAK)
Single die
FEATURES
• 175 °C T_J operation
• Low forward voltage drop
• High frequency operation
• High purity, high temperature epoxy
encapsulation for enhanced mechanical
strength and moisture resistance
• Guard ring for enhanced ruggedness and long
term reliability
• Meets MSL level 1, per J-STD-020, LF maximum peak
of 260 °C
• AEC-Q101 qualified meets JESD 201 class 1A whisker
test
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION
The VS-10TQ...SHM3 Schottky rectifier series has been
optimized for low reverse leakage at high temperature. The
proprietary barrier technology allows for reliable operation
up to 175 °C junction temperature. Typical applications are
in switching power supplies, converters, freewheeling
diodes, and reverse battery protection.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
CHARACTERISTICS
I_F(AV)
Rectangular waveform
V_RRM
I_FSM
t_p = 5 μs sine
V_F
10 A_pk, T_J = 125 °C
T_J
Range
VALUES
10
35/45
1050
0.49
-55 to 175
UNITS
A
V
A
V
°C
VOLTAGE RATINGS
PARAMETER
SYMBOL
Maximum DC reverse voltage
Maximum working peak reverse voltage
V_R
V_RWM
VS-10TQ035SHM3
35
VS-10TQ045SHM3
45
UNITS
V
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Maximum average forward current
See fig. 5
I_F(AV)
Maximum peak one cycle
non-repetitive surge current
I_FSM
See fig. 7
Non-repetitive avalanche energy
E_AS
Repetitive avalanche current
I_AR
TEST CONDITIONS
50 % duty cycle at T_C = 151 °C, rectangular waveform
5 μs sine or 3 μs rect. pulse Following any rated
load condition and with
10 ms sine or 6 ms rect. pulse rated V_RRM applied
T_J = 25 °C, I_AS = 2 A, L = 6.5 mH
Current decaying linearly to zero in 1 μs
Frequency limited by T_J maximum V_A = 1.5 x V_R typical
VALUES
10
1050
280
13
2
UNITS
A
A
mJ
A
Revision: 06-Mar-14
1
Document Number: 94962
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000