VS-10ETSFPPBF Datasheet, PDF (1/7 Pages) Vishay Siliconix – High Voltage, Input Rectifier Diode, 10 A

VS-10ETS..FPPbF Series, VS-10ETS..FP-M3 Series
www.vishay.com
Vishay Semiconductors
High Voltage, Input Rectifier Diode, 10 A
Base
cathode
TO-220 FULL-PAK
1
3
Cathode Anode
PRODUCT SUMMARY
Package
I_F(AV)
V_R
V_F at I_F
I_FSM
T_J max.
Diode variation
TO-220FP
10 A
800 V to 1200 V
1.1 V
160 A
150 °C
Single die
FEATURES
• Very low forward voltage drop
• 150 °C max. operating junction temperature
• Designed and qualified according to
JEDEC-JESD47
• Fully isolated package (V_INS = 2500 V_RMS)
• UL E78996 approved
• Material categorization:
For definitions of compliance please see
www.vishay.com/doc?99912
Available
APPLICATIONS
• Input rectification
• Vishay Semiconductors switches and output rectifiers
which are available in identical package outlines
DESCRIPTION
High voltage rectifiers optimized for very low forward
voltage drop with moderate leakage.
These devices are intended for use in main rectification
(single or three phase bridge).
OUTPUT CURRENT IN TYPICAL APPLICATIONS
APPLICATIONS
SINGLE-PHASE BRIDGE
Capacitive input filter T_A = 55 °C, T_J = 125 °C 
common heatsink of 1 °C/W
12.0
THREE-PHASE BRIDGE
16.0
UNITS
A
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
CHARACTERISTICS
I_F(AV)
Sinusoidal waveform
V_RRM
I_FSM
Range
V_F
10 A, T_J = 25 °C
T_J
VALUES
10
800/1200
160
1.1
- 40 to 150
UNITS
A
V
A
V
°C
VOLTAGE RATINGS
PART NUMBER
VS-10ETS08FPPbF, VS-10ETS08FP-M3
VS-10ETS12FPPbF, VS-10ETS12FP-M3
V_RRM, MAXIMUM
PEAK REVERSE VOLTAGE
V
800
1200
V_RSM, MAXIMUM NON-REPETITIVE
PEAK REVERSE VOLTAGE
V
900
1300
I_RRM
AT 150 °C
mA
0.5
Revision: 18-Jun-13
1
Document Number: 94335
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000