VS-10BQ015HM3 Datasheet, PDF (1/7 Pages) Vishay Siliconix – High Performance Schottky Rectifier, 1.0 A

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VS-10BQ015HM3
Vishay Semiconductors
High Performance Schottky Rectifier, 1.0 A
Cathode
Anode
PRODUCT SUMMARY
Package
I_F(AV)
V_R
V_F at I_F
I_RM
T_J max.
Diode variation
E_AS
SMB
1.0 A
15 V
0.21 V
35 mA at 100 °C
125 °C
Single die
1.0 mJ
FEATURES
• Low forward voltage drop
• Guard ring for enhanced ruggedness and long
term reliability
• 125 °C T_J operation (V_R < 5 V)
• Optimized for OR-ing applications
• High frequency operation
• High purity, high temperature epoxy encapsulation for
enhanced mechanical strength and moisture resistance
• Meets MSL level 1, per J-STD-020, LF maximum peak
of 260 °C
• Meets JESD 201 class 2 whisker test
• AEC-Q101 qualified
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION
The VS-10BQ015HM3 surface mount Schottky rectifier has
been designed for applications requiring low forward drop
and very small foot prints on PC boards. The proprietary
barrier technology allows for reliable operation up to 125 °C
junction temperature. Typical applications are in disk drives,
switching power supplies, converters, freewheeling diodes,
battery charging, and reverse battery protection.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
CHARACTERISTICS
I_F(AV)
V_RRM
I_FSM
Rectangular waveform
t_p = 5 μs sine
V_F
1.0 A_pk, T_J = 125 °C
T_J
Range
VALUES
1.0
15
140
0.21
-55 to +125
UNITS
A
V
A
V
°C
VOLTAGE RATINGS
PARAMETER
Maximum DC reverse voltage
Maximum working peak reverse voltage
SYMBOL
V_R
V_RWM
VS-10BQ015HM3
15
25
UNITS
V
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Maximum average forward current 
See fig. 5
I_F(AV)
Maximum peak one cycle
non-repetitive surge current
I_FSM
See fig. 7
Non-repetitive avalanche energy
E_AS
Repetitive avalanche current
I_AR
TEST CONDITIONS
50 % duty cycle at T_L = 134 °C, rectangular waveform
5 μs sine or 3 μs rect. pulse
10 ms sine or 6 ms rect. pulse
Following any rated load
condition and with rated
V_RRM applied
T_J = 25 °C, I_AS = 1 A, L = 2 mH
Current decaying linearly to zero in 1 μs
Frequency limited by T_J maximum V_A = 1.5 x V_R typical
VALUES
1.0
140
40
1.0
1.0
UNITS
A
A
mJ
A
Revision: 10-Mar-16
1
Document Number: 95722
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000