VS-100BGQ030 Datasheet, PDF (1/8 Pages) Vishay Siliconix – Schottky Rectifier

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VS-100BGQ030
Vishay Semiconductors
Schottky Rectifier, 100 A
Cathode
Anode
PowerTab^®
PRODUCT SUMMARY
Package
I_F(AV)
V_R
V_F at I_F
I_RM
T_J max.
Diode variation
E_AS
PowerTab^®
100 A
30 V
0.56 V
460 mA at 125 °C
150 °C
Single die
9 mJ
FEATURES
• 150 °C max. operating junction temperature
• High frequency operation
• Ultralow forward voltage drop
• Continuous high current operation
• Guard ring for enhanced ruggedness and long
term reliability
• Screw mounting only
• Designed and qualified according to JEDEC-JESD47
• PowerTab^® package
• Compliant to RoHS Directive 2002/95/EC
DESCRIPTION
The VS-100BGQ030 Schottky rectifier has been optimized
for ultralow forward voltage drop specifically for low voltage
output in high current AC/DC power supplies.
The proprietary barrier technology allows for reliable
operation up to 150 °C junction temperature. Typical
applications are in switching power supplies, converters,
reverse battery protection, and redundant power
subsystems.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
CHARACTERISTICS
I_F(AV)
V_RRM
I_FSM
V_F
T_J
Rectangular waveform
T_C
t_p = 5 μs sine
100 A_pk (typical)
T_J
Range
VALUES
100
106
30
4500
0.49
150
- 55 to 150
UNITS
A
°C
V
A
V
°C
°C
VOLTAGE RATINGS
PARAMETER
Maximum DC reverse voltage
Maximum working peak reverse voltage
SYMBOL
V_R
V_RWM
100BGQ030
30
UNITS
V
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Maximum average forward current
I_F(AV)
Maximum peak one cycle
non-repetitive surge current
I_FSM
Non-repetitive avalanche energy
E_AS
Repetitive avalanche current
I_AR
TEST CONDITIONS
50 % duty cycle at T_C = 106 °C, rectangular waveform
5 μs sine or 3 μs rect. pulse
10 ms sine or 6 ms rect. pulse
Following any rated load
condition and with rated
V_RRM applied
T_J = 25 °C, I_AS = 8 A, L = 1.12 mH
Current decaying linearly to zero in 1 μs
Frequency limited by T_J maximum V_A = 1.5 x V_R typical
VALUES
100
4500
850
36
8
UNITS
A
A
mJ
A
Revision: 17-Jun-11
1
Document Number: 94579
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