VQ3001J Datasheet, PDF (1/6 Pages) Vishay Siliconix – Dual N-/Dual P-Channel 30-V (D-S) MOSFETs

VQ3001J/P
Vishay Siliconix
Dual N-/Dual P-Channel 30-V (D-S) MOSFETs
PRODUCT SUMMARY
N-Channel
P-Channel
V_(BR)DSS Min (V)
30
–30
r_DS(on) Max (W)
1 @ V_GS = 12 V
2 @ V_GS = –12 V
V_GS(th) (V)
0.8 to 2.5
–2 to –4.5
I_D (A)
0.85
–0.6
FEATURES
D Low On-Resistance: 0.8/1.6 W
D Low Threshold: 1.5/–3.1 V
D Low Input Capacitance: 38/60 pF
D Fast Switching Speed: 9/16 ns
D Low Input and Output Leakage
BENEFITS
D Low Offset Voltage
D Low-Voltage Operation
D Easily Driven Without Buffer
D High-Speed Circuits
D Low Error Voltage
APPLICATIONS
D Direct Logic-Level Interface: TTL/CMOS
D Drivers: Relays, Solenoids, Lamps, Hammers,
Displays, Memories, Transistors, etc.
D Battery Operated Systems
D Solid-State Relays
Dual-In-Line
D_{1 1}
N
S_{1 2}
G_{1 3}
NC ₄
G_{2 5}
P
S_{2 6}
D_{2 7}
14 ^D4
13 ^S4
P
12 ^G4
11 ^NC
10 ^G3
9 ^S3
N
8 ^D3
Top View
Plastic: VQ3001J
Sidebraze: VQ3001P
Device Marking
Top View
VQ3001J
“S” fllxxyy
VQ3001P
“S” fllxxyy
“S” = Siliconix Logo
f = Factory Code
ll = Lot Traceability
xxyy = Date Code
ABSOLUTE MAXIMUM RATINGS (T_A = 25_C UNLESS OTHERWISE NOTED)
Single
Parameter
Symbol
N-Channel P-Channel _{Total Quad}
Drain-Source Voltage
Gate-Source Voltage
VQ3001J
VQ3001P
Continuous Drain Current
(T_J = 150_C)
Pulsed Drain Current^a
T_A= 25_C
T_A= 100_C
Power Dissipation
Thermal Resistance, Junction-to-Ambient
T_A= 25_C
T_A= 100_C
Operating Junction and Storage Temperature Range
V_DS
V_GS
I_D
I_DM
P_D
R_thJA
T_J, T_stg
30
"20
"20
0.85
0.52
3
1.3
0.52
96.2
–55 to 150
30
"20
"20
–0.6
–0.37
–2
1.3
2
0.52
0.8
96.2
62.5
–55 to 150
Notes
a. Pulse width limited by maximum junction temperature.
Unit
V
A
W
_C/W
_C
Document Number: 70221
S-04279—Rev. D, 16-Jul-01
www.vishay.com
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