VQ2004J Datasheet, PDF (1/4 Pages) Vishay Siliconix – Quad P-Channel 60-V (D-S) MOSFET

VQ2004J
Vishay Siliconix
Quad P-Channel 60-V (D-S) MOSFET
PRODUCT SUMMARY
V_(BR)DSS Min (V)
–60
r_DS(on) Max (W)
5 @ V_GS = –10 V
V_GS(th) (V)
–2 to –4.5
I_D (A)
–0.41
FEATURES
D High-Side Switching
D Low On-Resistance: 2.5 W
D Moderate Threshold: –3.4 V
D Fast Switching Speed: 40 ns
D Low Input Capacitance: 75 pF
BENEFITS
D Ease in Driving Switches
D Low Offset (Error) Voltage
D Low-Voltage Operation
D High-Speed Switching
D Easily Driven Without Buffer
APPLICATIONS
D Drivers: Relays, Solenoids, Lamps,
Hammers, Displays, Memories,
Transistors, etc.
D Battery Operated Systems
D Power Supply, Converter Circuits
D Motor Control
Dual-In-Line
D_{1 1}
P
S_{1 2}
G_{1 3}
NC ₄
G_{2 5}
P
S_{2 6}
D_{2 7}
14 ^D4
13 ^S4
P
12 ^G4
11 ^NC
10 ^G3
9 ^S3
P
8 ^D3
Top View
Plastic: VQ2004J
Device Marking
Top View
VQ2004J
“S” fllxxyy
“S” = Siliconix Logo
f = Factory Code
ll = Lot Traceability
xxyy = Date Code
ABSOLUTE MAXIMUM RATINGS (T_A = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Single
Total Quad
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T_J = 150_C)
Pulsed Drain Current^a
Power Dissipation
Thermal Resistance, Junction-to-Ambient
Operating Junction and Storage Temperature Range
T_A= 25_C
T_A= 100_C
T_A= 25_C
T_A= 100_C
V_DS
V_GS
I_D
I_DM
P_D
R_thJA
T_J, T_stg
–60
"30
–0.41
–0.23
–3
1.3
2
0.52
0.8
96
62.5
–55 to 150
Notes
a. Pulse width limited by maximum junction temperature.
Unit
V
A
W
_C/W
_C
Document Number: 70220
S-04279—Rev. C, 16-Jul-01
www.vishay.com
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