VP2410L Datasheet, PDF (1/4 Pages) Vishay Siliconix – P-Channel 240-V (D-S) MOSFET

P-Channel 240-V (D-S) MOSFET
VP2410L
Vishay Siliconix
PRODUCT SUMMARY
V_(BR)DSS Min (V) r_DS(on) Max (W)
–240
10 @ V_GS = –4.5 V
V_GS(th) (V)
–0.8 to –2.5
I_D (A)
–0.18
FEATURES
D High-Side Switching
D Secondary Breakdown Free: –255 V
D Low On-Resistance: 8 W
D Low-Power/Voltage Driven
D Excellent Thermal Stability
BENEFITS
D Ease in Driving Switches
D Full-Voltage Operation
D Low Offset Voltage
D Easily Driven Without Buffer
D No High-Temperature “Run-Away”
APPLICATIONS
D Drivers: Relays, Solenoids, Lamps,
Hammers, Displays, Memories,
Transistors, etc.
D Power Supply, Converters
D Motor Control
D Switches
TO-226AA
(TO-92)
S
1
G
2
D
3
Top View
Device Marking
Front View
“S” VP
2410L
xxyy
“S” = Siliconix Logo
xxyy = Date Code
ABSOLUTE MAXIMUM RATINGS (T_A = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Limits
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T_J = 150_C)
Pulsed Drain Current^a
Power Dissipation
Thermal Resistance, Junction-to-Ambient
Operating Junction and Storage Temperature Range
T_A= 25_C
T_A= 100_C
T_A= 25_C
T_A= 100_C
V_DS
V_GS
I_D
I_DM
P_D
R_thJA
T_J, T_stg
–240
"20
–0.18
–0.11
–0.72
0.8
0.32
156
–55 to 150
Notes
a. Pulse width limited by maximum junction temperature.
Document Number: 70211
S-04279—Rev. D, 16-Jun-01
Unit
V
A
W
_C/W
_C
www.vishay.com
11-1