VP2020L Datasheet, PDF (1/4 Pages) Vishay Siliconix – P-Channel 200-V (D-S) MOSFETs

VP2020L, BSS92
Vishay Siliconix
P-Channel 200-V (D-S) MOSFETs
PRODUCT SUMMARY
Part Number
VP2020L
BSS92
V_(BR)DSS Min (V)
–200
–200
r_DS(on) Max (W)
20 @ V_GS = –4.5 V
20 @ V_GS = –10 V
V_GS(th) (V)
–0.8 to –2.5
–0.8 to –2.8
I_D (A)
–0.12
–0.15
FEATURES
D High-Side Switching
D Secondary Breakdown Free: –220 V
D Low On-Resistance: 11.5 W
D Low-Power/Voltage Driven
D Excellent Thermal Stability
BENEFITS
D Ease in Driving Switches
D Full-Voltage Operation
D Low Offset Voltage
D Easily Driven Without Buffer
D No High-Temperature
“Run-Away”
APPLICATIONS
D Drivers: Relays, Solenoids, Lamps,
Hammers, Displays, Memories,
Transistors, etc.
D Power Supply, Converters
D Motor Control
D Switches
TO-226AA
(TO-92)
S
1
G
2
D
3
Top View
VP2020L
Device Marking
Front View
“S” VP
2020L
xxyy
“S” = Siliconix Logo
xxyy = Date Code
TO-92-18CD
(TO-18 Lead Form)
S
1
D
2
G
3
Top View
BSS92
Device Marking
Front View
“S” BS
S92
xxyy
“S” = Siliconix Logo
xxyy = Date Code
ABSOLUTE MAXIMUM RATINGS (T_A = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
VP2020L
BSS92
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T_J = 150_C)
Pulsed Drain Current^a
Power Dissipation
Thermal Resistance, Junction-to-Ambient
Operating Junction and Storage Temperature Range
T_A= 25_C
T_A= 100_C
T_A= 25_C
T_A= 100_C
V_DS
V_GS
I_D
I_DM
P_D
R_thJA
T_J, T_stg
–200
–200
"20
"20
–0.12
–0.15
–0.08
–0.09
–0.48
–0.6
0.8
1.0
0.32
0.4
156
125
–55 to 150
Notes
a. Pulse width limited by maximum junction temperature.
Unit
V
A
W
_C/W
_C
Document Number: 70210
S-04279—Rev. E, 16-Jun-01
www.vishay.com
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