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| VN50300L Datasheet, PDF (1/4 Pages) Vishay Siliconix – N-Channel 500-V (D-S) MOSFETs | |||
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VN50300L/VN50300T
Vishay Siliconix
N-Channel 500-V (D-S) MOSFETs
PRODUCT SUMMARY
Part Number V(BR)DSS Min (V)
VN50300L
500
VN50300T
rDS(on) Max (W)
300 @ VGS = 10 V
300 @ VGS = 10 V
VGS(th) (V)
1 to 4.5
1 to 4.5
ID (A)
0.033
0.022
FEATURES
D Moderate On-Resistance: 240 W
D Secondary Breakdown Free: 520 V
D Low Power/Voltage Driven
D Low Input and Output Leakage
D Excellent Thermal Stability
BENEFITS
D Low Offset Voltage
D Full-Voltage Operation
D Easily Driven Without Buffer
D Low Error Voltage
D No High-Temperature
âRun-Awayâ
APPLICATIONS
D High-Voltage Drivers: Relays, Solenoids,
Lamps, Hammers, Displays, Transistors,etc.
D Telephone Mute Switches, Ringer Circuits
D Power Supply, Converters
D Motor Control
TO-226AA
(TO-92)
S
1
G
2
D
3
Top View
VN50300L
Device Marking
Front View
âSâ VN5
0300L
xxyy
âSâ = Siliconix Logo
xxyy = Date Code
TO-236
(SOT-23)
G1
S2
3D
Top View
VN50300T
Device Marking
Top View
V1wll
V1 = Part Number Code for VN50300T
w = Week Code
ll = Lot Traceability
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
VN50300L
VN50300T
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150_C)
Pulsed Drain Currenta
Power Dissipation
Thermal Resistance, Junction-to-Ambient
Operating Junction and Storage Temperature Range
Notes
a. Pulse width limited by maximum junction temperature.
TA= 25_C
TA= 100_C
TA= 25_C
TA= 100_C
VDS
VGS
ID
IDM
PD
RthJA
TJ, Tstg
500
"30
0.033
0.021
0.013
0.8
0.32
156
â55 to 150
500
"30
0.022
0.013
0.08
0.35
0.14
350
Unit
V
A
W
_C/W
_C
Document Number: 70216
S-04279âRev. D, 16-Jul-01
www.vishay.com
11-1
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