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| VN2010L Datasheet, PDF (1/4 Pages) Vishay Siliconix – N-Channel 200-V (D-S) MOSFETs | |||
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VN2010L/BS107
Vishay Siliconix
N-Channel 200-V (D-S) MOSFETs
PRODUCT SUMMARY
Part Number
VN2010L
BS107
V(BR)DSS Min (V) rDS(on) Max (W)
10 @ VGS = 4.5 V
200
28 @ VGS = 2.8 V
VGS(th) (V)
0.8 to 1.8
0.8 to 3
ID (A)
0.19
0.12
D Low On-Resistance: 6 W
D Secondary Breakdown Free: 220 V
D Low Power/Voltage Driven
D Low Input and Output Leakage
D Excellent Thermal Stability
D Low Offset Voltage
D Full-Voltage Operation
D Easily Driven Without Buffer
D Low Error Voltage
D No High-Temperature
âRun-Awayâ
D High-Voltage Drivers: Relays, Solenoids,
Lamps, Hammers, Displays, Transistors, etc.
D Telephone Mute Switches, Ringer Circuits
D Power Supply, Converters
D Motor Control
TO-226AA
(TO-92)
S
1
G
2
D
3
Top View
VN2010L
Device Marking
Front View
âSâ VN
2010L
xxyy
âSâ = Siliconix Logo
xxyy = Date Code
TO-92-18RM
(TO-18 Lead Form)
D
1
G
2
S
3
Top View
BS107
Device Marking
Front View
âSâ BS
107
xxyy
âSâ = Siliconix Logo
xxyy = Date Code
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
VN2010L
BS107
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150_C)
Pulsed Drain Currenta
Power Dissipation
Thermal Resistance, Junction-to-Ambient
Operating Junction and Storage Temperature Range
TA= 25_C
TA= 100_C
TA= 25_C
TA= 100_C
VDS
VGS
ID
IDM
PD
RthJA
TJ, Tstg
200
"30
0.19
0.12
0.8
0.8
0.32
156
â55 to 150
200
"25
0.12
0.5
250
Notes
a. Pulse width limited by maximum junction temperature.
Unit
V
A
W
_C/W
_C
Document Number: 70215
S-04279âRev. C, 16-Jul-01
www.vishay.com
11-1
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