 English |
|
|
|
|
|
|
|
| VN2001L Datasheet, PDF (1/4 Pages) Vishay Siliconix – N-Channel 200-V (D-S) MOSFET | |||
| |||
|
New Product
N-Channel 200-V (D-S) MOSFET
VN2001L
Vishay Siliconix
PRODUCT SUMMARY
V(BR)DSS Min (V)
200
rDS(on) Max (W)
1.2 @ VGS = 10 V
1.3 @ VGS = 6 V
VGS(th) (V)
2 to 4
ID (A)
0.56
0.54
FEATURES
D TrenchFETr Power MOSFET
APPLICATIONS
D CRT Monitor HD Drive Circuit
D H-Drive Trans Switching
TO-226AA
(TO-92)
S
1
G
2
D
3
Top View
Ordering Information: VN2001L-TR1
Device Marking
Front View
âSâ VN
2001L
xxyy
âSâ = Siliconix Logo
xxyy = Date Code
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Limits
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
(TJ = 150_C)
Pulsed Drain Currenta
Avalanche Current
Single Pulse Avalanche Energy
Power Dissipation
Thermal Resistance, Junction-to-Ambient
Operating Junction and Storage Temperature Range
Notes
a. Pulse width limited by maximum junction temperature.
TA= 25_C
TA = 70_C
L = 0.1 mH
TA= 25_C
TA = 70_C
VDS
VGS
ID
IDM
IAS
EAS
PD
RthJA
TJ, Tstg
200
"20
0.56
0.45
2
1.5
0.11
0.8
0.51
156
â55 to 150
Unit
V
A
mJ
W
_C/W
_C
Document Number: 72654
S-40246âRev. A, 16-Feb-04
www.vishay.com
1
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese