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| VN1206L Datasheet, PDF (1/4 Pages) Vishay Siliconix – N-Channel 120-V (D-S) MOSFET | |||
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N-Channel 120-V (D-S) MOSFET
VN1206L
Vishay Siliconix
PRODUCT SUMMARY
V(BR)DSS Min (V) rDS(on) Max (W)
120
6 @ VGS = 10 V
VGS(th) (V)
0.8 to 2
ID (A)
0.23
FEATURES
D Low On-Resistance: 3.8 W
D Low Threshold: 1.4 V
D Low Input Capacitance: 35 pF
D Fast Switching Speed: 10 ns
D Low Input and Output Leakage
BENEFITS
D Low Offset Voltage
D Low-Voltage Operation
D Easily Driven Without Buffer
D High-Speed Circuits
D Low Error Voltage
APPLICATIONS
D Direct Logic-Level Interface: TTL/CMOS
D Drivers: Relays, Solenoids, Lamps, Hammers,
Displays, Memories, Transistors, etc.
D Battery Operated Systems
D Solid-State Relays
TO-226AA
(TO-92)
S
1
G
2
D
3
Top View
VN1206L
Device Marking
Front View
âSâ VN
1206L
xxyy
âSâ = Siliconix Logo
xxyy = Date Code
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Limits
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
(TJ = 150_C)
Pulsed Drain Currenta
Power Dissipation
Thermal Resistance, Junction-to-Ambient
Operating Junction and Storage Temperature Range
TA= 25_C
TA= 100_C
TA= 25_C
TA= 100_C
VDS
VGS
ID
IDM
PD
RthJA
TJ, Tstg
120
"30
0.23
0.15
2
0.8
0.32
156
â55 to 150
Notes
a. Pulse width limited by maximum junction temperature.
Document Number: 70227
S-04279âRev. E, 16-Jul-01
Unit
V
A
W
_C/W
_C
www.vishay.com
11-1
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