VN0808LS Datasheet, PDF (1/4 Pages) Vishay Siliconix – N-Channel 80- and 90-V (D-S) MOSFETs

VN0808L/LS, VQ1006P
Vishay Siliconix
N-Channel 80- and 90-V (D-S) MOSFETs
PRODUCT SUMMARY
Part Number
VN0808L
VN0808LS
VQ1006P
V_(BR)DSS Min (V)
80
90
r_DS(on) Max (W)
4 @ V_GS = 10 V
4 @ V_GS = 10 V
4 @ V_GS = 10 V
V_GS(th) (V)
0.8 to 2
0.8 to 2
0.8 to 2.5
I_D (A)
0.3
0.33
0.4
FEATURES
D Low On-Resistance: 3.6 W
D Low Threshold: 1.6 V
D Low Input Capacitance: 35 pF
D Fast Switching Speed: 6 ns
D Low Input and Output Leakage
BENEFITS
D Low Offset Voltage
D Low-Voltage Operation
D Easily Driven Without Buffer
D High-Speed Circuits
D Low Error Voltage
APPLICATIONS
D Direct Logic-Level Interface: TTL/CMOS
D Drivers: Relays, Solenoids, Lamps, Hammers,
Displays, Memories, Transistors, etc.
D Battery Operated Systems
D Solid-State Relays
TO-226AA
(TO-92)
S
1
G
2
D
3
Top View
VN0808L
Front View:
VN0808L
“S” VN
0808L
xxyy
TO-92S
S
1
G
2
D
3
Top View
VN0808LS
Front View:
VN0808LS
“S” VN
0808LS
xxyy
“S” = Siliconix Logo
f = Factory Code
ll = Lot Traceability
xxyy = Date Code
Dual-In-Line
D_{1 1}
N
S_{1 2}
G_{1 3}
NC ₄
G_{2 5}
N
S_{2 6}
D_{2 7}
14 ^D4
13 ^S4
N
12 ^G4
11 ^NC
10 ^G3
9 ^S3
N
8 ^D3
Top View
Sidebraze: VQ1006P
Top View:
VQ1006P
VQ1006P
“S”f//xxyy
ABSOLUTE MAXIMUM RATINGS (T_A = 25_C UNLESS OTHERWISE NOTED)
VQ1006P
Parameter
Symbol VN0808L VN0808LS ^Single
Total Quad
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
(T_J = 150_C)
Pulsed Drain Current^a
T_A= 25_C
T_A= 100_C
Power Dissipation
T_A= 25_C
T_A= 100_C
Thermal Resistance, Junction-to-Ambient
Operating Junction and Storage Temperature Range
V_DS
V_GS
I_D
I_DM
P_D
R_thJA
T_J, T_stg
80
"30
0.3
0.19
1.9
0.8
0.32
156
80
"30
0.33
0.21
1.9
0.9
0.4
139
90
"20
0.4
0.23
2
1.3
0.52
96
–55 to 150
2
0.8
62.5
Notes
a. Pulse width limited by maximum junction temperature.
Unit
V
A
W
_C/W
_C
Document Number: 70214
S-04279—Rev.D, 16-Jul-01
www.vishay.com
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