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VFT2045CBP_15 Datasheet, PDF (1/4 Pages) Vishay Siliconix – Trench MOS Barrier Schottky Rectifier
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VFT2045CBP
Vishay General Semiconductor
Trench MOS Barrier Schottky Rectifier
for PV Solar Cell Bypass Protection
Ultra Low VF = 0.33 V at IF = 5.0 A
TMBS ®
ITO-220AB
123
VFT2045CBP
PIN 1
PIN 2
PIN 3
FEATURES
• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Solder dip 275 °C max. 10 s, per JESD 22-B106
• TJ 200 °C max. in solar bypass mode application
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in solar cell junction box as a bypass diode for
protection, using DC forward current without reverse bias.
PRIMARY CHARACTERISTICS
IF(AV)
VRRM
IFSM
VF at IF = 10 A
TOP max. (AC mode)
TJ max. (DC forward current)
Package
2 x 10 A
45 V
160 A
0.41 V
150 °C
200 °C
ITO-220AB
Diode variation
Dual Common Cathode
MECHANICAL DATA
Case: ITO-220AB
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS-compliant, and
commercial grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 1A whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Maximum repetitive peak reverse voltage
Maximum average forward rectified current (fig. 1)
per device
per diode
VRRM
IF(AV) (1)
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load per diode
IFSM
Isolation voltage from termal to heatsink, t = 1 min
Operating junction and storage temperature range (AC mode)
Junction temperature in DC forward current
without reverse bias, t  1 h
VAC
TOP, TSTG
TJ (2)
Notes
(1) With heatsink
(2) Meets the requirements of IEC 61215 ed. 2 bypass diode thermal test
VFT2045CBP
45
20
10
160
1500
-40 to +150
 200
UNIT
V
A
A
V
°C
°C
Revision: 29-Oct-13
1
Document Number: 89368
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000