VF60120C Datasheet, PDF (1/4 Pages) Vishay Siliconix – Trench MOS Schottky technology

New Product
VF60120C
Vishay General Semiconductor
Dual High-Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low V_F = 0.41 V at I_F = 5 A
TMBS ^®
ITO-220AB
123
VF60120C
PIN 1
PIN 2
PIN 3
FEATURES
• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Low thermal resistance
• Solder dip 275 °C max. 10 s, per JESD 22-B106
• Compliant to RoHS Directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
• Halogen-free according to IEC 61249-2-21 definition
TYPICAL APPLICATIONS
For use in high frequency converters, switching power
supplies, freewheeling diodes, OR-ing diode, DC/DC
converters and reverse battery protection.
PRIMARY CHARACTERISTICS
I_F(AV)
2 x 30 A
V_RRM
120 V
I_FSM
300 A
V_F at I_F = 30 A
0.71 V
T_J max.
150 °C
MECHANICAL DATA
Case: ITO-220AB
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS compliant, and
commercial grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 1A whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
MAXIMUM RATINGS (T_A = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Maximum repetitive peak reverse voltage
Maximum average forward rectified current (fig. 1)
per device
per diode
V_RRM
I_F(AV)
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load per diode
I_FSM
Isolation voltage from termal to heatsink t = 1
Voltage rate of change (rated V_R)
Operating junction and storage temperature range
V_AC
dV/dt
T_J, T_STG
VF60120C
120
60
30
300
1500
10 000
- 40 to + 150
UNIT
V
A
A
V
V/μs
°C
Document Number: 89395 For technical questions within your region, please contact one of the following:
Revision: 07-Feb-11
[e-mail], [e-mail], [e-mail]
www.vishay.com
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