VF60100C_15 Datasheet, PDF (1/5 Pages) Vishay Siliconix – Dual High-Voltage Trench MOS Barrier Schottky Rectifier

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VF60100C
Vishay General Semiconductor
Dual High-Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low V_F = 0.36 V at I_F = 5 A
TMBS ^®
ITO-220AB
123
VF60100C
PIN 1
PIN 2
PIN 3
FEATURES
• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Solder dip 275 °C max. 10 s, per JESD 22-B106
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in high frequency converters, switching power
supplies, freewheeling diodes, OR-ing diode, DC/DC
converters and reverse battery protection.
PRIMARY CHARACTERISTICS
I_F(AV)
2 x 30 A
V_RRM
100 V
I_FSM
V_F at I_F = 30 A
T_J max.
320 A
0.66 V
150 °C
Package
ITO-220AB
Diode variation
Dual common cathode
MECHANICAL DATA
Case: ITO-220AB
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS-compliant, and
commercial grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 1A whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
MAXIMUM RATINGS (T_A = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Maximum repetitive peak reverse voltage
V_RRM
Maximum average forward rectified current (fig. 1)
per device
per diode
I_F(AV)
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load per diode
I_FSM
Isolation voltage from terminal to heatsink t = 1 min
V_AC
Voltage rate of change (rated V_R)
Operating junction and storage temperature range
dV/dt
T_J, T_STG
VF60100C
100
60
30
320
1500
10 000
-40 to +150
UNIT
V
A
A
V
V/μs
°C
Revision: 17-Aug-15
1
Document Number: 89394
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000