VESD12A1C-HD1 Datasheet, PDF (1/7 Pages) Vishay Siliconix – ESD-Protection Diode in LLP1006-2L

ESD-Protection Diode in LLP1006-2L
VESD12A1C-HD1
Vishay Semiconductors
Features
• Ultra compact LLP1006-2L package
• Low package height < 0.4 mm
• 1-line ESD-protection
• Low leakage current < 0.01 µA
• Low load capacitance C_D = 12.5 pF
(V_R = 6 V; f = 1 MHz)
• ESD-protection acc. IEC 61000-4-2
± 30 kV contact discharge
± 30 kV air discharge
• High surge current acc. IEC61000-4-5 I_PP > 4 A
• Soldering can be checked by standard vision
inspection. No X-ray necessary
• Lead (Pb)-free component
• Pin plating NiPdAu (e4) no whisker growth
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
2
20855
1
20856
Marking (example only)
XY
21121
Bar = Cathode marking
X = Date code
Y = Type code (see table below)
Ordering Information
Device name
VESD12A1C-HD1
Ordering code
VESD12A1C-HD1-GS08
Taped units per reel
(8 mm tape on 7" reel)
8000
Minimum order quantity
8000
Package Data
Device name
Package
name
Type
code
Weight
Molding compound
flammability rating
VESD12A1C-HD1 LLP1006-2L G 0.72 mg
UL 94 V-0
Moisture sensitivity level
MSL level 1
(according J-STD-020)
Soldering conditions
260 °C/10 s at terminals
Absolute Maximum Ratings
Rating
Peak pulse current
Peak pulse power
ESD immunity
Operating temperature
Storage temperature
Test conditions
Symbol
Value
Unit
Acc. IEC 61000-4-5, t_P = 8/20 µs/single shot
I_PPM
4
A
Acc. IEC 61000-4-5, t_P = 8/20 µs/single shot
P_PP
92
W
Contact discharge acc. IEC 61000-4-2; 10 pulses
V_ESD
± 30
kV
Air discharge acc. IEC 61000-4-2; 10 pulses
V_ESD
± 30
kV
Junction temperature
T_J
- 40 to + 125
°C
T_STG
- 55 to + 150
°C
* Please see document “Vishay Green and Halogen-Free Definitions (5-2008)” http://www.vishay.com/doc?99902
Document Number 81799
Rev. 1.2, 02-Sep-08
For technical support, please contact: [e-mail]
www.vishay.com
1