VESD05A1B-HD1 Datasheet, PDF (1/6 Pages) Vishay Siliconix – ESD-Protection Diode in LLP1006-2L

VESD05A1B-HD1
Vishay Semiconductors
ESD-Protection Diode in LLP1006-2L
2
1
20856
20855
MARKING (example only)
XY
21121
Bar = cathode marking
X = date code
Y = type code (see table below)
ORDERING INFORMATION
DEVICE NAME
ORDERING CODE
VESD05A1B-HD1
VESD05A1B-HD1-GS08
FEATURES
• Ultra compact LLP1006-2L package
• Low package height < 0.4 mm
• 1-line ESD-protection
• Low leakage current < 0.1 μA
• Low load capacitance C_D = 12 pF
(V_R = 2.5 V; f = 1 MHz)
• ESD-protection acc. IEC 61000-4-2
± 30 kV contact discharge
± 30 kV air discharge
• High surge current acc. IEC61000-4-5 I_PP > 3 A
• Soldering can be checked by standard vision inspection.
No X-ray necessary
• Pin plating NiPdAu (e4) no whisker growth
• e4 - precious metal (e.g. Ag, Au, NiPd, NiPdAu) (no Sn)
• Compliant to RoHS Directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
TAPED UNITS PER REEL
(8 mm TAPE on 7" REEL)
8000
MINIMUM ORDER QUANTITY
8000
PACKAGE DATA
DEVICE NAME
PACKAGE
NAME
VESD05A1B-HD1 LLP1006-2L
TYPE
CODE
D
WEIGHT
0.72 mg
MOLDING COMPOUND
FLAMMABILITY RATING
UL 94 V-0
MOISTURE
SENSITIVITY LEVEL
MSL level 1
(according J-STD-020)
SOLDERING
CONDITIONS
260 °C/10 s at terminals
ABSOLUTE MAXIMUM RATINGS
PARAMETER
TEST CONDITIONS
Peak pulse current
Peak pulse power
ESD immunity
acc. IEC 61000-4-5; t_P = 8/20 μs; single shot
acc. IEC 61000-4-5; t_P = 8/20 μs; single shot
Contact discharge acc. IEC 61000-4-2; 10 pulses
Air discharge acc. IEC 61000-4-2; 10 pulses
Operating temperature
Junction temperature
Storage temperature
SYMBOL
I_PPM
P_PP
V_ESD
V_ESD
T_J
T_stg
VALUE
3
33
± 30
± 30
- 40 to + 125
- 55 to + 150
UNIT
A
W
kV
kV
°C
°C
** Please see document “Vishay Material Category Policy”: www.vishay.com/doc?99902
Document Number: 81796
Rev. 1.4, 26-Oct-10
For technical questions, contact: [e-mail]
www.vishay.com
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