VESD03A1B-HD1-GS08 Datasheet, PDF (1/6 Pages) Vishay Siliconix – ESD-Protection Diode in LLP1006-2L

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VESD03A1B-HD1
Vishay Semiconductors
ESD-Protection Diode in LLP1006-2L
2
1
20856
20855
MARKING (example only)
XY
21121
Bar = cathode marking
X = date code
Y = type code (see table below)
FEATURES
• Ultra compact LLP1006-2L package
• Low package height < 0.4 mm
• 1-line ESD-protection
• Low leakage current < 0.5 μA
• Low load capacitance C_D = 15 pF
(V_R = 2.5 V; f = 1 MHz)
• ESD-protection acc. IEC 61000-4-2
± 30 kV contact discharge
± 30 kV air discharge
• High surge current acc. IEC61000-4-5 I_PP > 3.5 A
• Soldering can be checked by standard vision inspection.
No X-ray necessary
• Pin plating NiPdAu (e4) no whisker growth
• e4 - precious metal (e.g. Ag, Au, NiPd, NiPdAu) (no Sn)
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
ORDERING INFORMATION
DEVICE NAME
ORDERING CODE
VESD03A1B-HD1
VESD03A1B-HD1-GS08
TAPED UNITS PER REEL
(8 mm TAPE on 7" REEL)
8000
MINIMUM ORDER QUANTITY
8000
PACKAGE DATA
DEVICE NAME
PACKAGE
NAME
VESD03A1B-HD1 LLP1006-2L
TYPE
CODE
J
WEIGHT
0.72 mg
MOLDING COMPOUND
MOISTURE
FLAMMABILITY RATING SENSITIVITY LEVEL
UL 94 V-0
MSL level 1
(according J-STD-020)
SOLDERING
CONDITIONS
260 °C/10 s at terminals
ABSOLUTE MAXIMUM RATINGS
PARAMETER
TEST CONDITIONS
Peak pulse current
Peak pulse power
ESD immunity
Acc. IEC 61000-4-5; t_P = 8/20 μs; single shot
Acc. IEC 61000-4-5; t_P = 8/20 μs; single shot
Contact discharge acc. IEC 61000-4-2; 10 pulses
Air discharge acc. IEC 61000-4-2; 10 pulses
Operating temperature
Junction temperature
Storage temperature
SYMBOL
I_PPM
P_PP
V_ESD
T_J
T_stg
VALUE
3.5
31
± 30
± 30
- 40 to + 125
- 55 to + 150
UNIT
A
W
kV
kV
°C
°C
Rev. 1.5, 20-Jun-12
1
Document Number: 81851
For technical questions, contact: [e-mail]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000