VCUT05B1-DD1-G-08 Datasheet, PDF (1/5 Pages) Vishay Siliconix – Bidirectional Symmetrical (BiSy) Single Line ESD-Protection Diode in LLP1006-2M

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VCUT05B1-DD1
Vishay Semiconductors
Bidirectional Symmetrical (BiSy) Single Line ESD-Protection Diode
in LLP1006-2M
1
2
21129
MARKING (example only)
XY
21121
Bar = pin 1 marking
X = date code
Y = type code (see table below)
20855
FEATURES
• Ultra compact LLP1006-2M package
• Low package height < 0.4 mm
• 1-line ESD-protection
• Working range ± 5.5 V
• Low leakage current < 0.1 μA
• Low load capacitance CD = 10 pF
• ESD-protection acc. IEC 61000-4-2
± 30 kV contact discharge
± 30 kV air discharge
• Soldering can be checked by standard vision inspection.
No X-ray necessary
• Pin plating NiPdAu (e4) no whisker growth
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
ORDERING INFORMATION
DEVICE NAME
ORDERING CODE
VCUT05B1-DD1
VCUT05B1-DD1-G-08
TAPED UNITS PER REEL
(8 mm TAPE ON 7" REEL)
8000
MINIMUM ORDER QUANTITY
8000
PACKAGE DATA
DEVICE NAME
PACKAGE
NAME
VCUT05B1-DD1 LLP1006-2M
TYPE
CODE
P
WEIGHT
0.72 mg
MOLDING COMPOUND
MOISTURE
FLAMMABILITY RATING SENSITIVITY LEVEL
UL 94 V-0
MSL level 1
(according J-STD-020)
SOLDERING
CONDITIONS
260 °C/10 s at terminals
ABSOLUTE MAXIMUM RATINGS
PARAMETER
TEST CONDITIONS
Peak pulse current
acc. IEC 61000-4-5, 8/20 μs/single shot
Peak pulse power
ESD immunity
Pin 1 to pin 2
acc. IEC 61000-4-5; t_p = 8/20 μs; single shot
Contact discharge acc. IEC61000-4-2; 10 pulses
Air discharge acc. IEC61000-4-2; 10 pulses
Operating temperature
Junction temperature
Storage temperature
SYMBOL
I_PPM
P_PP
V_ESD
V_ESD
T_J
T_stg
VALUE
3
38
± 30
± 30
- 55 to + 145
- 55 to + 150
UNIT
A
W
kV
°C
°C
Rev. 1.2, 21-Jun-12
1
Document Number: 81149
For technical questions, contact: [e-mail]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000