VCUT0505B-HD1 Datasheet, PDF (1/5 Pages) Vishay Siliconix – Bidirectional Symmetrical (BiSy) Single Line ESD-Protection Diode in LLP1006-2L

VCUT0505B-HD1
Vishay Semiconductors
Bidirectional Symmetrical (BiSy) Single Line ESD-Protection Diode
in LLP1006-2L
1
2
21129
20855
MARKING (example only)
XY
21121
Bar = pin 1marking
X = date code
Y = type code (see table below)
ORDERING INFORMATION
DEVICE NAME
ORDERING CODE
VCUT0505B-HD1
VCUT0505B-HD1-GS08
FEATURES
• Ultra compact LLP1006-2L package
• Low package profile < 0.4 mm
• 1-line ESD-protection
• Working range ± 5 V
• Low leakage current I_R < 0.1 µA
• Low load capacitance C_D = 18 pF
• ESD-protection acc. IEC 61000-4-2
± 20 kV contact discharge
± 25 kV air discharge
• Soldering can be checked by standard vision inspection;
no X-ray necessary
• Pin plating NiPdAu (e4) no whisker growth
• e4 - precious metal (e.g. Ag, Au, NiPd, NiPdAu) (no Sn)
• Compliant to RoHS Directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
TAPED UNITS PER REEL
(8 mm TAPE on 7" REEL)
8000
MINIMUM ORDER QUANTITY
8000
PACKAGE DATA
DEVICE NAME
PACKAGE
NAME
VCUT0505B-HD1 LLP1006-2L
TYPE
CODE
L
WEIGHT
0.72 mg
MOLDING COMPOUND
MOISTURE
FLAMMABILITY RATING SENSITIVITY LEVEL
UL 94 V-0
MSL level 1
(according J-STD-020)
SOLDERING
CONDITIONS
260 °C/10 s at terminals
ABSOLUTE MAXIMUM RATINGS
PARAMETER
TEST CONDITIONS
Peak pulse current
Peak pulse power
ESD immunity
acc. IEC 61000-4-5; t_p = 8/20 µs; single shot
Pin 1 to pin 2
acc. IEC 61000-4-5; t_p = 8/20 µs; single shot
Contact discharge acc. IEC 61000-4-2; 10 pulses
Air discharge acc. IEC 61000-4-2; 10 pulses
Operating temperature
Junction temperature
Storage temperature
SYMBOL
I_PPM
P_PP
V_ESD
T_J
T_stg
VALUE
3.5
56
± 20
± 25
- 40 to + 125
- 55 to + 150
UNIT
A
W
kV
kV
°C
°C
ELECTRICAL CHARACTERISTICS (T_amb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITIONS/REMARKS
SYMBOL MIN.
Protection paths
Number of lines which can be protected
N_lines
-
Reverse working voltage
at I_R = 0.1 µA
V_RWM
5
Reverse current
at V_R = 5 V
I_R
-
Reverse breakdown voltage
at I_R = 1 mA
V_BR
7
Reverse clamping voltage
at I_PP = 1 A
at I_PP = I_PPM = 3.5 A
V_C
-
V_C
-
Capacitance
at V_R = 0 V; f = 1 MHz
at V_R = 2.5 V; f = 1 MHz
C_D
-
C_D
-
TYP.
-
-
-
-
-
-
18
14.5
MAX.
1
-
0.1
-
12
16
20
-
UNIT
lines
V
µA
V
V
V
V
pF
** Please see document “Vishay Material Category Policy”: www.vishay.com/doc?99902
Document Number: 81852
Rev. 1.6, 26-Oct-10
For technical questions, contact: [e-mail]
www.vishay.com
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