VCUT03B1-DD1 Datasheet, PDF (1/5 Pages) Vishay Siliconix – Bidirectional Symmetrical (BiSy) Single Line ESD-Protection Diode in LLP1006-2M

VCUT03B1-DD1
Vishay Semiconductors
Bidirectional Symmetrical (BiSy) Single Line ESD-Protection Diode
in LLP1006-2M
1
2
21129
20855
MARKING (example only)
XY
21121
Bar = pin 1 marking
X = Date code
Y = Type code (see table below)
FEATURES
• Ultra compact LLP1006-2M package
• Low package height < 0.4 mm
• 1-line ESD-protection
• Working range ± 3.5 V
• Low leakage current < 0.1 µA
• Low load capacitance CD = 12.5 pF
• ESD-protection acc. IEC 61000-4-2
± 18 kV contact discharge
± 20 kV air discharge
• Soldering can be checked by standard vision inspection.
No X-ray necessary
• Pin plating NiPdAu (e4) no whisker growth
• Compliant to RoHS directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
ORDERING INFORMATION
DEVICE NAME
ORDERING CODE
VCUT03B1-DD1
VCUT03B1-DD1
TAPED UNITS PER REEL
(8 mm TAPE ON 7" REEL)
8000
MINIMUM ORDER QUANTITY
8000
PACKAGE DATA
DEVICE NAME
PACKAGE
NAME
VCUT03B1-DD1 LLP1006-2M
TYPE
CODE
N
WEIGHT
0.72 mg
MOLDING COMPOUND
FLAMMABILITY RATING
UL 94 V-0
MOISTURE
SENSITIVITY LEVEL
MSL level 1
(according J-STD-020)
SOLDERING
CONDITIONS
260 °C/10 s at terminals
ABSOLUTE MAXIMUM RATINGS
PARAMETER
TEST CONDITIONS
Peak pulse current
Peak pulse power
ESD immunity
Acc. IEC 61000-4-5; t_p = 8/20 µs; single shot
Pin 1 to pin 2
Acc. IEC 61000-4-5; t_p = 8/20 µs; single shot
Contact discharge acc. IEC61000-4-2; 10 pulses
Air discharge acc. IEC61000-4-2; 10 pulses
Operating temperature
Junction temperature
Storage temperature
SYMBOL
I_PPM
P_PP
V_ESD
T_J
T_STG
VALUE
3.5
40
± 18
± 20
- 40 to + 125
- 55 to + 150
UNIT
A
W
kV
°C
°C
** Please see document “Vishay Material Category Policy”: www.vishay.com/doc?99902
Document Number: 81148
Rev. 1.3, 13-Jul-10
For technical questions, contact: [e-mail]
www.vishay.com
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