VCR2N Datasheet, PDF (1/3 Pages) Vishay Siliconix – JFET Voltage-Controlled Resistors

VCR2N/4N/7N
Vishay Siliconix
JFET Voltage-Controlled Resistors
PRODUCT SUMMARY
Part Number
V_GS(off) Max (V)
VCR2N
−7
VCR4N
−7
VCR7N
−5
V_(BR)GSS Min (V)
−25
−25
−25
r_DS(on) Max (W)
60
600
8000
FEATURES
D Continuous Voltage-Controlled
Resistance
D High Off-Isolation
D High Input Impedance
BENEFITS
D Gain Ranging Capability/Wide Range
Signal Attenuation
D No Circuit Interaction
D Simplified Drive
APPLICATIONS
D Variable Gain Amplifiers
D Voltage Controlled Oscillator
D AGC
DESCRIPTION
The VCR2N/4N/7N JFET voltage controlled resistors have an
ac drain-source resistance that is controlled by a dc bias
voltage (V_GS) applied to their high impedance gate terminal.
Minimum r_DS occurs when V_GS = 0 V. As V_GS approaches the
pinch-off voltage, r_DS rapidly increases. This series of junction
FETs is intended for applications where the drain-source
voltage is a low-level ac signal with no dc component.
Key to device performance is the predictable r_DS change
versus V_GS bias where:
Ť Ť ^{rDS(@ VGS + 0)}
r_DSbias [
V_GS
1– _VGS(off)
These n-channel devices feature r_DS(on) ranging from 20 to
8000 W . All packages are hermetically sealed and may be
processed per MIL-S-19500 (see Military Information).
TO-206AA
(TO-18)
S
1
2
3
D
Top View
VCR2N, VCR4N
G and Case
For applications information see AN105.
Document Number: 70293
S-41225—Rev. F, 28-Jun-04
TO-206AF
(TO-72)
S
1
C
4
2
D
3
G
Top View
VCR7N
www.vishay.com
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