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VBUS05B1-SD0 Datasheet, PDF (1/6 Pages) Vishay Siliconix – Ultra Low Capacitance Bidirectional Symmetrical (BiSy) Single Line ESD-Protection Diode in Silicon Package | |||
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www.vishay.com
VBUS05B1-SD0
Vishay Semiconductors
Ultra Low Capacitance Bidirectional Symmetrical (BiSy) Single Line
ESD-Protection Diode in Silicon Package
22543
0.3
22544
MARKING (example only)
1 XY
22454
1 = year codeï
Open circle = month code and pin 1ï
XY = type code
0.27
0.6
FEATURES
⢠Ultra compact CLP0603 package
⢠Low package height < 0.3 mm
⢠1-line ESD-protection
⢠Working range ± 5.5 V
⢠Low leakage current < 0.1 μA
⢠Ultra low load capacitance CD = 0.29 pF typ.
⢠ESD-protection acc. IEC 61000-4-2ï
± 16 kV contact dischargeï
± 16 kV air discharge
⢠Lead plating: Au (e4)
⢠Lead material: Ni
⢠Backside coating
⢠Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
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ORDERING INFORMATION
DEVICE NAME
ORDERING CODE
VBUS05B1-SD0
VBUS05B1-SD0-G4-08
TAPED UNITS PER REEL
(8 mm TAPE ON 7" REEL)
15 000
MINIMUM ORDER QUANTITY
15 000
PACKAGE DATA
DEVICE NAME
VBUS05B1-SD0
PACKAGE NAME
CLP0603
TYPE CODE
5A
WEIGHT
0.12 mg
SOLDERING CONDITIONS
260 °C/10 s at terminals
Reflow soldering
according JEDEC® STD-020
ABSOLUTE MAXIMUM RATINGS
PARAMETER
TEST CONDITIONS
Peak pulse current
acc. IEC 61000-4-5, 8/20 μs/single shot
Peak pulse power
ESD immunity
Pin 1 to pin 2
acc. IEC 61000-4-5; tp = 8/20 μs; single shot
Contact discharge acc. IEC 61000-4-2; 10 pulses
Air discharge acc. IEC 61000-4-2; 10 pulses
Operating temperature
Junction temperature
Storage temperature
SYMBOL
IPPM
PPP
VESD
TJ
Tstg
VALUE
2.5
45
± 16
± 16
-55 to +150
-55 to +150
UNIT
A
W
kV
°C
°C
Rev. 1.2, 28-Aug-15
1
Document Number: 85899
For technical questions, contact: ESDprotection@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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