VBUS051BD-HD1-GS08 Datasheet, PDF (1/6 Pages) Vishay Siliconix – Low Capacitance, Single-Line ESD-Protection Diode

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VBUS051BD-HD1
Vishay Semiconductors
Low Capacitance, Single-Line ESD-Protection Diode
2
1
20856
20855
MARKING (example only)
XY
21121
Bar = cathode marking
Y = type code (see table below)
X = date code
FEATURES
• Ultra compact LLP1006-2L package
• Low package profile < 0.4 mm
• 1-line ESD-protection
• High surge current acc. IEC 61000-4-5
I_PPM > 3 A
• Low leakage current I_R < 0.1 μA
• Low load capacitance C_D = 0.9 pF
• ESD-protection acc. IEC 61000-4-2
± 15 kV contact discharge
± 15 kV air discharge
• Soldering can be checked by standard vision inspection;
no X-ray necessary
• Pin plating NiPdAu (e4) no whisker growth
• e4 - precious metal (e.g. Ag, Au, NiPd, NiPdAu) (no Sn)
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
ORDERING INFORMATION
DEVICE NAME
ORDERING CODE
VBUS051BD-HD1
VBUS051BD-HD1-GS08
TAPED UNITS PER REEL
(8 mm TAPE ON 7" REEL)
8000
MINIMUM ORDER QUANTITY
8000
PACKAGE DATA
DEVICE NAME
PACKAGE
NAME
VBUS051BD-HD1 LLP1006-2L
TYPE
CODE
A
WEIGHT
0.72 mg
MOLDING COMPOUND
FLAMMABILITY RATING
UL 94 V-0
MOISTURE
SENSITIVITY LEVEL
MSL level 1
(according J-STD-020)
SOLDERING
CONDITIONS
260 °C/10 s at terminals
ABSOLUTE MAXIMUM RATINGS
PARAMETER
TEST CONDITIONS
Peak pulse current
Peak pulse power
ESD immunity
acc. IEC 61000-4-5; t_p = 8/20 μs; single shot
acc. IEC 61000-4-5; t_p = 8/20 μs; single shot
Contact discharge acc. IEC 61000-4-2; 10 pulses
Air discharge acc. IEC 61000-4-2; 10 pulses
Operating temperature
Junction temperature
Storage temperature
SYMBOL
I_PPM
P_PP
V_ESD
T_J
T_STG
VALUE
3
45
± 15
± 15
- 55 to + 145
- 55 to + 150
UNIT
A
W
kV
kV
°C
°C
ELECTRICAL CHARACTERISTICS
(Ratings at 25 °C ambient temperature, unless otherwise specified)
PARAMETER
TEST CONDITIONS/REMARKS
Protection paths
Number of lines which can be protected
Reverse stand-off voltage
Max. reverse working voltage
Reverse voltage
Reverse current
Reverse breakdown voltage
Reverse clamping voltage
Forward clamping voltage
Capacitance
at I_R = 0.1 μA; pin 2 to pin 1
at V_R = V_RWM = 5 V; pin 2 to pin 1
at I_R = 1 mA; pin 2 to pin 1
at I_PP = 3 A; acc. IEC 61000-4-5; pin 2 to pin 1
at I_F = 3 A; acc. IEC 61000-4-5; pin 1 to pin 2
at V_R = 0 V; f = 1 MHz; pin 2 to pin 1
SYMBOL
N_lines
V_RWM
V_R
I_R
V_BR
V_C
V_F
C_D
MIN.
-
-
5
-
6.9
-
-
-
TYP.
-
-
-
< 0.01
7.9
-
3.4
0.9
MAX.
1
5
-
0.1
8.7
16
4
1.3
UNIT
lines
V
V
μA
V
V
V
pF
Rev. 2.0, 23-May-12
1
Document Number: 81785
For technical questions, contact: [e-mail]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000