VBT4060C-M3 Datasheet, PDF (1/4 Pages) Vishay Siliconix – Trench MOS Schottky technology

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VBT4060C-M3, VBT4060CHM3
Vishay General Semiconductor
Dual Trench MOS Barrier Schottky Rectifier
Ultra Low V_F = 0.32 V at I_F = 5.0 A
TMBS ^®
TO-263AB
K
2
1
VBT4060C
PIN 1
K
PIN 2
HEATSINK
PRIMARY CHARACTERISTICS
Package
TO-263AB
I_F(AV)
V_RRM
I_FSM
V_F at I_F = 20 A
T_J max.
Diode variations
2 x 20 A
60 V
240 A
0.48 V
150 °C
Common cathode
FEATURES
• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• AEC-Q101 qualified available
- Automotive ordering code: base P/NHM3
• Meets MSL level 1, per J-STD-020, LF maximum peak
of 245 °C
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in high frequency converters, switching power
supplies, freewheeling diodes, OR-ing diode, DC/DC
converters, and reverse battery protection.
MECHANICAL DATA
Case: TO-263AB
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS-compliant, and
commercial grade
Base P/NHM3 - halogen-free, RoHS-compliant, and
AEC-Q101 qualified
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 and HM3 suffix meets JESD 201 class 2 whisker test
Polarity: As marked
MAXIMUM RATINGS (T_A = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Maximum repetitive peak reverse voltage
Maximum average forward rectified current
(fig. 1)
per device
per diode
V_RRM
I_F(AV)
Peak forward surge current 8.3 ms single half sine-wave superimposed
on rated load
I_FSM
Voltage rate of change (rated V_R)
Operating junction and storage temperature range
dV/dt
T_J, T_STG
VBT4060C
60
40
20
240
10 000
-40 to +150
UNIT
V
A
A
V/μs
°C
ELECTRICAL CHARACTERISTICS (T_A = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
I_F = 5.0 A
I_F = 10 A
T_A = 25 °C
Instantaneous forward voltage
per diode ⁽¹⁾
I_F = 20 A
I_F = 5.0 A
V_F
I_F = 10 A
T_A = 125 °C
I_F = 20 A
Reverse current per diode ⁽²⁾
V_R = 60 V
T_A = 25 °C
T_A = 125 °C
I_R
Notes
(1) _{Pulse test: 300 μs pulse width, 1 % duty cycle}
(2) _{Pulse test: Pulse width  40 ms}
TYP.
0.43
0.48
0.53
0.32
0.39
0.48
-
34
MIN.
-
-
0.62
-
-
0.57
6.0
190
UNIT
V
mA
Revision: 03-Jan-17
1
Document Number: 87973
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000