VBT30L60C Datasheet, PDF (1/4 Pages) Vishay Siliconix – Dual Trench MOS Barrier Schottky Rectifier

New Product
VBT30L60C
Vishay General Semiconductor
Dual Trench MOS Barrier Schottky Rectifier
Ultra Low V_F = 0.32 V at I_F = 5.0 A
TMBS ^®
TO-263AB
K
2
1
VBT30L60C
PIN 1
K
PIN 2
HEATSINK
PRIMARY CHARACTERISTICS
I_F(AV)
2 x 15 A
V_RRM
60 V
I_FSM
200 A
V_F at I_F = 15 A
0.45 V
T_J max.
150 °C
FEATURES
• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 245 °C
• Not recommended for PCB bottom side wave mounting
• Compliant to RoHS Directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
TYPICAL APPLICATIONS
For use in high frequency converters, switching power
supplies, freewheeling diodes, OR-ing diode, DC/DC
converters, and reverse battery protection.
MECHANICAL DATA
Case: TO-263AB
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS compliant, commercial grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test
Polarity: As marked
MAXIMUM RATINGS (T_A = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Maximum repetitive peak reverse voltage
Maximum average forward rectified current
(fig. 1)
per device
per diode
V_RRM
I_F(AV)
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
I_FSM
Voltage rate of change (rated V_R)
Operating junction and storage temperature range
dV/dt
T_J, T_STG
VBT30L60C
60
30
15
200
10 000
- 40 to + 150
UNIT
V
A
A
V/μs
°C
Document Number: 89329 For technical questions within your region, please contact one of the following:
Revision: 07-Dec-10
[e-mail], [e-mail], [e-mail]
www.vishay.com
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