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VBT3080S-M3_15 Datasheet, PDF (1/4 Pages) Vishay Siliconix – Trench MOS Barrier Schottky Rectifier
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VBT3080S-M3
Vishay General Semiconductor
Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.39 V at IF = 5 A
TMBS ®
TO-263AB
K
A
NC
VBT3080S
NC
K
A
HEATSINK
PRIMARY CHARACTERISTICS
Package
TO-263AB
IF(AV)
VRRM
IFSM
VF at IF = 30 A
TJ max.
Diode variation
30 A
80 V
200 A
0.73 V
150 °C
Single die
FEATURES
• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 245 °C
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in high frequency converters, switching power
supplies, freewheeling diodes, OR-ing diode, DC/DC
converters, and reverse battery protection.
MECHANICAL DATA
Case: TO-263AB
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS-compliant, and
commercial grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 1A whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Maximum repetitive peak reverse voltage
Maximum average forward rectified current (fig. 1)
Peak forward surge current 8.3 ms single half sine-wave superimposed
on rated load
VRRM
IF(AV)
IFSM
Operating junction and storage temperature range
TJ, TSTG
VBT3080S
80
30
200
- 55 to + 150
UNIT
V
A
A
°C
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
TYP.
Instantaneous forward voltage (1)
Reverse current (2)
IF = 5 A
IF = 15 A
TA = 25 °C
IF = 30 A
IF = 5 A
VF
IF = 15 A
TA = 125 °C
IF = 30 A
VR = 80 V
TA = 25 °C
TA = 125 °C
IR
0.47
0.61
0.82
0.39
0.57
0.73
70
23
Notes
(1) Pulse test: 300 μs pulse width, 1 % duty cycle
(2) Pulse test: Pulse width  40 ms
MAX.
-
-
0.95
-
-
0.82
1000
45
UNIT
V
μA
mA
Revision: 14-May-13
1
Document Number: 87979
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000