VBT3045CBP Datasheet, PDF (1/4 Pages) Vishay Siliconix – Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection

New Product
VBT3045CBP
Vishay General Semiconductor
Trench MOS Barrier Schottky Rectifier
for PV Solar Cell Bypass Protection
Ultra Low V_F = 0.30 V at I_F = 5.0 A
TMBS ^®
TO-263AB
FEATURES
• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
K
• Meets MSL level 1, per J-STD-020, LF
maximum peak of 245 °C
2
1
VBT3045CBP
• Not recommended for PCB bottom side wave mounting
• Compliant to RoHS Directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
PIN 1
PIN 2
K
HEATSINK
TYPICAL APPLICATIONS
For use in solar cell junction box as a bypass diode for
protection, using DC forward current without reverse bias.
PRIMARY CHARACTERISTICS
I_F(AV)
2 x 15 A
V_RRM
45 V
I_FSM
200 A
V_F at I_F = 15 A
0.39 V
T_OP max.
150 °C
MECHANICAL DATA
Case: TO-263AB
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS compliant, commercial grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
MAXIMUM RATINGS (T_A = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Maximum repetitive peak reverse voltage
Maximum average forward rectified current (fig. 1)
per device
per diode
V_RRM
I_F(AV) ⁽¹⁾
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load per diode
I_FSM
Operating junction and storage temperature range
Junction temperature in DC forward current
without reverse bias, t ≤ 1 h
T_OP, T_STG
T_J ⁽²⁾
Notes
(1) _{With heatsink}
(2) _{Meets the requirements of IEC 61215 ed. 2 bypass diode thermal test}
VBT3045CBP
45
30
15
200
- 40 to + 150
≤ 200
UNIT
V
A
A
°C
°C
Document Number: 89373 For technical questions within your region, please contact one of the following:
Revision: 27-Oct-10
[e-mail], [e-mail], [e-mail]
www.vishay.com
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