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VBT3045CBP-M3_15 Datasheet, PDF (1/4 Pages) Vishay Siliconix – Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection
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VBT3045CBP-M3
Vishay General Semiconductor
Trench MOS Barrier Schottky Rectifier
for PV Solar Cell Bypass Protection
Ultra Low VF = 0.30 V at IF = 5.0 A
TMBS ®
TO-263AB
K
2
1
VBT3045CBP
PIN 1
K
PIN 2
HEATSINK
FEATURES
• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Meets MSL level 1, per J-STD-020,
LF maximum peak of 245 °C
• TJ 200 °C max. in solar bypass mode application
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in solar cell junction box as a bypass diode for
protection, using DC forward current without reverse bias.
PRIMARY CHARACTERISTICS
Package
TO-263AB
IF(AV)
VRRM
IFSM
2 x 15 A
45 V
200 A
VF at IF = 15 A
0.39 V
TOP max. (AC mode)
TJ max. (DC forward current)
Diode variation
150 °C
200 °C
Common cathode
MECHANICAL DATA
Case: TO-263AB
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS-compliant, and
commercial grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 1A whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Maximum repetitive peak reverse voltage
Maximum average forward rectified current (fig. 1)
per device
per diode
VRRM
IF(AV) (1)
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load per diode
IFSM
Operating junction and storage temperature range (AC mode)
Junction temperature in DC forward current
without reverse bias, t  1 h
TOP, TSTG
TJ (2)
Notes
(1) With heatsink
(2) Meets the requirements of IEC 61215 ed. 2 bypass diode thermal test
VBT3045CBP
45
30
15
200
- 40 to + 150
 200
UNIT
V
A
A
°C
°C
Revision: 30-Apr-13
1
Document Number: 87962
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000