VBT2080S-M3_15 Datasheet, PDF (1/5 Pages) Vishay Siliconix – Dual High Voltage Trench MOS Barrier Schottky Rectifier

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VT3060G, VFT3060G, VBT3060G, VIT3060G
Vishay General Semiconductor
Dual High Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low V_F = 0.40 V at I_F = 5 A
TO-220AB
TMBS ^®
ITO-220AB
VT3060G
3
2
1
PIN 1
PIN 2
PIN 3
CASE
TO-263AB
K
VFT3060G
123
PIN 1
PIN 2
PIN 3
TO-262AA
K
2
1
VBT3060G
PIN 1
K
PIN 2
HEATSINK
VIT3060G
3
2
1
PIN 1
PIN 2
PIN 3
K
PRIMARY CHARACTERISTICS
I_F(AV)
V_RRM
I_FSM
V_F at I_F = 15 A
T_J max.
Package
2 x 15 A
60 V
150 A
0.61 V
150 °C
TO-220AB, ITO-220AB,
TO-263AB, TO-262AA
Diode variations
Common cathode
FEATURES
• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Meets MSL level 1, per J-STD-020,
LF maximum peak of 245 °C (for TO-263AB
package)
• Not recommended for PCB bottom side wave mounting
• Solder bath temperature 275 °C maximum, 10 s, per
JESD 22-B106 (for TO-220AB, ITO-220AB and TO-262AA
package)
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in high frequency inverters, switching power
supplies, freewheeling diodes, OR-ing diode, DC/DC
converters and reverse battery protection.
MECHANICAL DATA
Case: TO-220AB, ITO-220AB, TO-263AB and
TO-262AA
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS compliant and commercial grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs max.

MAXIMUM RATINGS (T_A = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Max. repetitive peak reverse voltage
Max. average forward rectified current 
(fig. 1)
per device
per diode
V_RRM
I_F(AV)
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
I_FSM
Non-repetitive avalanche energy 
at T_J = 25 °C, L = 60 mH per diode
Peak repetitive reverse current
at t_p = 2 μs, 1 kHz, T_J = 38 °C ± 2 °C per diode
Isolation voltage (ITO-220AB only)
from terminal to heatsink t = 1 min
E_AS
I_RRM
V_AC
Operating junction and storage temperature range
T_J, T_STG
VT3060G
VFT3060G VBT3060G
60
30
15
150
120
1.0
1500
- 55 to + 150
VIT3060G
UNIT
V
A
A
mJ
A
V
°C
Revision: 16-Aug-13
1
Document Number: 89135
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000